Heavy-Ion-Induced Displacement Damage Effects on WO x ECRAM

Matthew J. Marinella,Christopher H. Bennett,Brian Zutter,Max Siath,Matthew Spear,Gyorgy Vizkelethy,T. Patrick Xiao,Elliot Fuller,David Hughart,Sapan Agarwal,Yiyang Li,A. Alec Talin
DOI: https://doi.org/10.1109/tns.2024.3360409
IF: 1.703
2024-01-01
IEEE Transactions on Nuclear Science
Abstract:Electrochemical random access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog neuromorphic computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of ~1011 cm-2), metal oxide ECRAM does not exhibit significant change – demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (>1011 cm-2), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.
engineering, electrical & electronic,nuclear science & technology
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