Abstract:The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here, we develop a numerical model that, through the minimization of free energy at a given voltage, determines the filament parameters and thus the electric current. Overall, it simulates the current-voltage (I-V) characteristics of RRAM. The model describes mutual transformations of RRAM states through SET (ON→OFF) and RESET (OFF→ON) processes. From the modeling perspectives, these states and processes constitute four programing modules constructed here in COMSOL multiphysics software tackling the electrodynamic and heat transfer equations and yielding RRAM energy and I-V. Our modeling uniquely reproduces the observed I-V varying with voltage ramp-rates. This is achieved by accounting for the ramp-rate dependent activation energy of conduction. The underlying mechanism is due to the deformation interaction caused by the double well atomic potentials universally present in amorphous materials and having exponentially broad distribution of relaxation times. As another unique feature, our modeling reproduces the observed cycle-to-cycle variations of RRAM parameters attributed to the lack of self-averaging in small ensembles of double well potentials and electronic states in geometrically small (nano-sized) RRAM structures.

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

A Physical Based 2D Monte Carlo Simulation of MO-ECRAM Programming for Device Optimization

ECRAM As Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array

Comprehensive numerical modeling of filamentary RRAM devices including voltage ramp-rate and cycle-to-cycle variations

A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode

Modeling of Transient Thermal Dissipation of Nanoscale Phase-Change Memory Cells in the Pulse Domain

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Physics-Based Stochastic Three-Dimensional Modeling for Metal–Oxide Resistive Random Access Memory

Modeling and Simulation of RRAM with Carbon Nanotube Electrode

HSPICE Macromodel of PCRAM for Binary and Multilevel Storage

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Device and SPICE modeling of RRAM devices.