Abstract:Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al 2 O 3 using trimethylaluminum [TMA, Al(CH 3 ) 3 ] and Ar–O 2 plasma within the temperature range of 80–200 °C. Thin-film analysis revealed low impurity contents and a decreasing growth-per-cycle (GPC) with increasing temperature. The underlying chemistry of the process was studied with a combination of gas-phase infrared spectroscopy on the exhaust plasma gas and optical emission spectroscopy (OES) on the plasma zone. Among the chemical species formed in the plasma half-cycle, CO 2 , H 2 O, CH 4 , and CH 2 O were identified. The formation of these products confirms that the removal of CH 3 ligands during the plasma half-cycle occurs through two reaction pathways that have a different temperature dependences: (i) combustion reactions initiated by O 2 plasma species and leading to CO 2 and H 2 O formation and (ii) thermal ALD-like reactions initiated by the H 2 O molecules formed in pathway (i) and resulting in CH 4 production. With increasing temperature, the dehydroxylation of OH groups cause less TMA adsorption which leads to less CO 2 and H 2 O from the combustion reactions in the plasma step. At the same time, the higher reactivity of H 2 O at higher temperatures initiates more thermal ALD-like reactions, thus producing relatively more CH 4 . The CH 4 can also undergo further gas-phase reactions leading to the formation of CH 2 O as was theoretically predicted. Another observation is that O 3 , which is naturally produced in the atmospheric-pressure O 2 plasma, decomposes at higher temperatures mainly due to an increase of gas-phase collisions. In addition to the new insights into the growth mechanism of atmospheric-pressure PE-s-ALD of Al 2 O 3 , this work presents a method to study both the surface chemistry during spatial ALD to further extend our fundamental understanding of the method.

The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Tuning Ignition and Energy Release Properties of Zirconium Powder by Atomic Layer Deposited Metal Oxide Coatings

A Mechanism for the Growth of a Plasma Electrolytic Oxide Coating on Al

Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Employing Oxygen-Plasma Posttreatment to Improve the Laser-Induced Damage Threshold of ZrO_2 Films Prepared by the Electron-Beam Evaporation Method

Parametric Study of Zirconium Oxide Films Using Plasma‐Based Ion Implantation and Deposition

Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

The Mechanism of PEO Process on Al–Si Alloys in Zirconate Solution

Preparation and Formation Mechanism of the Zirconia Coating on Al-Si Alloys by Plasma Electrolytic Oxidation

Deposition and growth kinetics studies of thin zirconium dioxide films by UVILS-CVD

N ew Class of Zr Precursor Containing Boratabenzene Ligand Enabling Highly Conformal Wafer-Scale Zirconium Dioxide Thin Films through Atomic Layer Deposition

Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy

Thin-film Barrier Performance of Zirconium Oxide Using the Low-Temperature Atomic Layer Deposition Method.

Infrared And Raman Spectroscopic Studies Of Optically Transparent Zirconia (Zro2) Films Deposited By Plasma-Assisted Reactive Pulsed Laser Deposition

Low-Temperature Remote Plasma Enhanced Atomic Layer Deposition of Zro2/Zircone Nanolaminate Film for Efficient Encapsulation of Flexible Organic Light-Emitting Diodes

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Growth of highly-oriented zinc oxide thin films by plasma enhanced chemical vapor deposition

Suppressing substrate oxidation during plasma-enhanced atomic layer deposition on semiconductor surfaces