Ar/O2 Gas Pressure Dependence of Atomic Concentration of Zirconia Prepared by Zirconium Pulse Arc PBII&D
K Yukimura,H Yoshinaga,Y Ohtsu,H Fujita,K Nakamura,XX Ma
DOI: https://doi.org/10.1016/j.nimb.2005.08.052
IF: 1.279
2005-01-01
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Abstract:Zirconium oxide films were prepared by plasma-based ion implantation and deposition (PBII&D), where a zirconium pulse arc discharge was generated in O2/Ar gas mixture. The plasma was maintained for approximately 3ms, and the ion current at the substrate was detected in a time range from 1 to 10ms after the arc initiation. At O2/Ar pressures of 2.6–3.0Pa, a stoichiometric film was obtained, while at a pressure lower than 2.2Pa, the film also contained ZrOx (x<2) phase as well as ZrO2 phase. In the absence of argon gas, the plasma became unstable, which resulted in shortage of zirconium ions in the plasma, and hence, a stoichiometric condition was not found.