Low‐Energy Oxygen Plasma Injection of 2D Bi 2 Se 3 Realizes Highly Controllable Resistive Random Access Memory
Chujun Yin,Chuanhui Gong,Siying Tian,Yi Cui,Xuepeng Wang,Yang Wang,Zhenheng Hu,Jianwen Huang,Chunyang Wu,Bo Chen,Xianfu Wang,Chaobo Li
DOI: https://doi.org/10.1002/adfm.202108455
IF: 19
2021-10-01
Advanced Functional Materials
Abstract:Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability and stability are the problems that need to be solved for practical applications. Here, by introducing a damage-less ion implantation technology using ultralow-energy plasma, the transport mechanisms of space charge limited current and Schottky emission are successfully realized and controlled in RRAM based on 2D Bi2Se3 nanosheets. The memristors exhibit stable resistive switching behavior with a high resistive switching ratio (>104), excellent cycling endurances (300 cycles), and great retention performance (>104 s). The reliability and controllability of Bi2Se3 memory endowed by oxygen plasma injection demonstrate the great potential of this ultralow-energy ion implantation technology in the application of 2D RRAM.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology