Abstract:The electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin–orbit torques generated in an adjacent heavy-metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin–orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena. The magnetization and exchange bias field in an IrMn/CoFeB bilayer can be independently switched using a current-controlled spin–orbit torque generated in the antiferromagnetic IrMn layer.

Ultra-low-pressure Sputtering to Improve Exchange Bias and Tune Linear Ranges in Spin Valves

High-sensitivity GMR with low coercivity in top-IrMn spin-valves

Structure Optimization and Thermal Annealing Effect of IrMn-based Bottom Spin Valves

Study on the Structure of Spin Valve for GMR Sensor with Low Coercivity

The Optimization of Ta Buffer Layer in Magnetron Sputtering IrMn Top Spinvalve

Interlayer Magnetostatic Coupling Induced Co Layer Coercivity Enhancement and Exchange Bias in [pd/co]/cu/co Spin Valves

Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities

Effect of Annealing on SAF Spin Valves with Variable Easy Axis of Free Layer

Manipulating Exchange Bias in Ir25Mn75/CoTb Bilayer Through Spin–orbit Torque

Investigation on High Vacuum Magnetron Sputtered IrMn Bottom Spin Valves

Study of Spin Valves With $L 1_{0}$-FePt Pinning Layer and Different Pinned Layers

Manipulating the interlayer exchange coupling in CoFeB/Ta/CoFeB multilayered spin valve for magnonic applications

Study Of Spin Valves With L1(0)-Fept Pinning Layer And Different Pinned Layers

Magnetoresistance in Nano-Scale Nio-Containing Co/Cu/Co Spin Valves

Effect of Interfacial Roughness on Magnetoresistance of Co/Cu/Co/NiO Spin Valve

Study of Spin Valves With L 10-FePt Pinning Layer and Different Pinned Layers

Effect of Interfacial Roughness Configuration on the Exchange-Bias Field in NiO Based Spin Valves

Improvement of Magnetoresistive Character of NiO/NiFeCo/Cu/NiFeCo Exchange-Biased Spin-Valves Through Annealing in Magnetic Field

Study on GMR Magnetic Sensor with Low Coercivity and the Single Domain Model

Optimization of Ta Buffer Layer in IrMn Top Spinvalve

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque