Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Surface and Bulk Contributions to the Second-Harmonic Generation in B I 2 S E 3

Surface Versus Bulk Doping Effects on Second Harmonic Generation from Bi2Se3

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Resonance-type thickness dependence of optical second harmonic generation in thin-films of the topological insulator Bi2Se3

Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator Bi$_2$Se$_3$

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

Observation of Dirac-like surface state bands on the top surface of BiSe

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Surface Second Harmonic Generation from Topological Dirac Semimetal PdTe$_2$

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Structure-Dependent Optical Properties of Self-Organized Bi2Se3 Nanostructures: from Nanocrystals to Nanoflakes.

Observation of Chiral Surface Excitons in a Topological Insulator Bi$_2$Se$_3$

Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures