Abstract:Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high-performance quantum devices. To achieve the better performance of TIs, here, we present a codoping strategy using synergistic rare-earth (RE) Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both a transition-metal-doped TI [high ferromagnetic ordering temperature and observed quantum anomalous Hall effect (QAHE)], and a RE doped TI (large magnetic moments and significant spin-orbit coupling). In the as-grown single crystals, clear evidences of ferromagnetic ordering were observed. The angle-resolve photoemission spectroscopy indicates the ferromagnetism opens a ∼44 meV band gap at the surface Dirac point. Moreover, the mobility of the carriers at 3 K is ∼7400cm2/Vs, and we thus observed an ultra-strong Shubnikov–de Haas oscillation in the longitudinal resistivity, as well as the Hall steps in transverse resistivity <14 T. Our transport and angular-resolved photoemission spectroscopy results suggest that the RE and transition metal codoping in the Bi2Se3 system is a promising avenue to implement the QAHE, as well as harnessing the massive Dirac fermion in electrical devices.

Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

High-Mobility Bi 2 Se 3 Nanoplates Manifesting Quantum Oscillations of Surface States in the Sidewalls

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Surface and Bulk Contributions to the Second-Harmonic Generation in B I 2 S E 3

Quantum oscillations in Rashba semiconductor BiTeCl

Evidence for a Dirac Spectrum in the Topological Insulator Bi$_2$Te$_2$Se from High-Field Shubnikov-de Haas Oscillations

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

Evidence of Layered Transport of Bulk Carriers in Fe-doped Bi2Se3 Topological Insulators

Shubnikov-de Haas and de Haas-van Alphen oscillations in Czochralski grown CoSi single crystal

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal

Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3