Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

Independent Al2O3/SiNx:H and SiO2/SiN X:H Passivation of P+ and N+ Silicon Surfaces for High-Performance Interdigitated Back Contact Solar Cells

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Realization and Simulation of Interdigitated Back Contact Silicon Solar Cells with Dopant-Free Asymmetric Hetero-Contacts

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Self‐Diffusion Effect Assisted TiO2/Li3PO4 Electron Selective Passivating Contact in Silicon Solar Cells Approaching 23% Efficiency

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

Hard mask processing of 20% efficiency back-contacted silicon solar cells with dopant-free heterojunctions

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Realization of SiOx/SiNx Stacks As Multi Anti-Reflection Coatings and Selectively Copper-plating Mask for Silicon Heterojunction Solar Cell with 23.5% Efficiency

An insight into effect of front surface field on the performance of interdigitated back contact silicon heterojunction solar cells

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Rear-Sided Passivation by SiN X :H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Edge Effect in Silicon Solar Cells with Dopant-Free Interdigitated Back-Contacts

Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts