Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in Finfet Technology

A Comprehensive Extraction Method to Decompose Different Random Variation Impacts in bulk FinFET Technology

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: from the Time-Zero to the Aging States.

Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Variability- and Reliability-Aware Design for 16/14nm and Beyond Technology

Understanding Hot Carrier Degradation and Variation in FinFET Technology

The impact of line edge roughness on the stability of a FinFET SRAM

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions