Abstract:Ab initio methods based on density functional theory are employed to investigate the bonding of oxygen (O) at the oxide/nanocrystal (NC) interface after hydrogen (H)-passivated silicon (Si) NCs are oxidized. Besides the well-known quantum confinement effect, the type of O bonding and the oxidation state of Si at the oxide/NC interface are found to significantly affect the optical properties of oxidized Si NCs. After oxidation, the excitation energies of Si-35 and Si-66 increase, while those of Si-87 and Si-123 decrease. We show that oxidation-induced redshifts in the light emission from Si NCs do not always result from defective O such as doubly bonded O at the oxide/NC interface. When Si atoms at the oxide/NC interface are mainly in low oxidation states, backbond O at the interface per se results in the redshifts in the light emission from Si NCs. When Si atoms at the oxide/NC interface are mainly in high oxidation states. Si3+=O at the interface leads to the redshifts in the light emission from Si NCs. It is found that for Si NCs with perfect oxide/NC interface (i.e., O at the interface is all backbond O) the seriously weakened next-nearest-neighboring Si Si of Si3+ readily breaks after excitation. At the oxide/NC interface. Si2+=O induced strong electronic localization and Si2+=O and Si3+=O induced reduction of interface polarization stabilize the geometry of oxidized Si NCs at the excited state. The electronic localization of severely stressed bridge O at the oxide/NC interface is relatively weak. This facilitates the breaking of nearest-neighboring Si Si at the oxide/NC interface as oxidized Si NCs are excited.

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Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Size dependence of refractive index of Si nanoclusters embedded in SiO2

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Atomic Structural Model of the Si/SiO_2 Interface

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Study on the AlN/Si Interface Properties

Structure And Energetics Of C-Si/A-Sio2 Systems: Planar Interfaces And Embedded Si Nanocrystals

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

Optical Properties of Amorphous Si/Sio2 Superlattice

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Electronic Structures of Β-Si3n4(0001)/si(111) Interfaces: Perfect Bonding and Dangling Bond Effects

Effect of interstitial lithium atom on crystal and electronic structure of silicon oxynitride

Scattered Refractive Index Profiles of Thin Silicon Oxide Film on Silicon Substrate

Optical properties and their depth profiling of Si nanocrystals embedded in SiO2 matrix

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Atomic Structure of the Interface Between Srtio3 Thin Films and Si(001) Substrates

Local electric field investigation of Si2N2O and its electronic structure, elastic and optical properties

Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

Measurement and Study on Optical Properties of Nano-crystalline Silicon Films