Abstract:Spintronic memory has been considered as one of the most promising nonvolatile memory candidates to address the leakage power consumption in the post-Moore's era. To date, the spintronic magnetic random access memory (MRAM) family has mainly evolved in four-generation technology advancement, from toggle-MRAM (product in 2006), to STT-MRAM (product in 2012), to SOT-MRAM (intensive R&D today), and to VCMA- MRAM (intensive R&D today). In addition, another spintronic memory, named racetrack memory (RM), proposed in 2008, has also evolved in two generations from domain wall (DW) based RM to skyrmion-based RM. On the other hand, from the architectural perspective, data transfer bandwidth and the related power consumption has become the most critical bottleneck in vonNeumann computing architecture, owing to the separation of the processor and the memory units and the performance mismatch between the two. Realization of the unity of computing and memory in the same place has opened up a promising research direction of computing-in-memory (CIM). Spintronic memory could be a promising technology to implement the CIM paradigm, owing to its intrinsic processing capability. Lots of interests have been attracted and a number of attempts have been made in this field, within both MRAM and RM. In this paper, we perform a mini review on the R&D evolution of spintronic memories: from memory to computing-in-memory. Particularly, we will introduce our recent work on advanced spintronic memories as well as CIM paradigms implemented within spintronic memories.

Spin-Transfer Versus Spin-Orbit Torque Mram

Spin-orbit torques: Materials, physics, and devices

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Spin Orbit Torques for Ultra-Low Power Computing.

Ultrafast Spintronic Integrated Circuits

High-Density NAND-Like Spin Transfer Torque Memory with Spin Orbit Torque Erase Operation

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Magnetic Memory (MRAM), a New Area for 2D and 3D SoC/SiP Design

Two-dimensional materials prospects for non-volatile spintronic memories

Recent advances in spin-orbit torques: Moving towards device applications

Towards Spintronics Nonvolatile Caches

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Spin–Orbit Torques in Metallic Magnetic Multilayers: Challenges and New Opportunities

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo

Spintronic Memories: from Memory to Computing-in-Memory

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin-Orbit Torque Magnetic Random Access Memory.