Abstract:Spin–orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii–Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c23127?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c23127</a>.Numerical calculation and verification on <a class="ref internalNav" href="#eq6">eqs 6</a> and <a class="ref internalNav" href="#eq8">8</a>; statement of the fluctuating thermal field; phase diagram of the first current and switching probability; results of timing analysis; micromagnetic simulation method; and snapshots of magnetization (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c23127/suppl_file/am0c23127_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

Ultrafast Spintronic Integrated Circuits

Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing

Design of an Erasable Spintronics Memory Based on Current-Path-dependent Field-Free Spin Orbit Torque

Computational Study for Spin-orbit Torque Magnetic Random Access Memory

Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction

Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories.

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Evaluation of Spin-Hall-Assisted Stt-Mram for Cache Replacement

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

Spin-orbit torques: Materials, physics, and devices

Energy-Efficient Ultrafast SOT-MRAMs Based on Low-Resistivity Spin Hall Metal Au<sub>0.25</sub>Pt<sub>0.75</sub>

Field-free Switching Enabled by Interplay of Spin-Orbit Torque and Interlayer Dzyaloshinskii-Moriya Interaction

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.