Abstract:Molybdenum disulfide (MoS 2 ) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS 2 field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturally n-doped MoS 2 is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS 2 Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find that p-type MoS2 SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2 SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2 device. Introducing a dual-split gate geometry, the MoS 2 SBFETs can further operate in four distinct configurations: p − p, n − n, p − n, and n − p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

A Common-Source Amplifier Based on Single Layer MoS2

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Small-signal amplifier based on single-layer MoS2

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

High Performance Amplifier Element Realization Via MoS2/GaTe Heterostructures

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

SPICE Modeling and Simulation of High-Performance Wafer-Scale MoS2 Transistors

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors Through Strain Engineering.

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing