Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

A 10 nm Short Channel MoS 2 Transistor without the Resolution Requirement of Photolithography

Channel Length Scaling of MoS2 MOSFETs

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Two dimensional semiconducting materials for ultimately scaled transistors

Scaled contact length with low contact resistance in monolayer 2D channel transistors.