Development of single quantum Hall devices for the resistance standard in NIM

Xueshen Wang,Qing Zhong,Jinjin Li,Yunfeng Lu,Yuan Zhong,Mengke Zhao,Zhengkun Li,Zhun Li
DOI: https://doi.org/10.1109/CPEM.2016.7540500
2016-01-01
Abstract:In this paper we report the progress on single quantum Hall devices for the resistance standards in NIM. We use the NIM-made device and the LEP-made device distributed to NIM by BIPM to calibrate a Tinsley 100 Ω transfer resistor using a cryogenic current comparator (CCC) at the filling factor k=2. The deviations of resistance values from the nominal value were -4.4808×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> ±3.5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> by NIM-1 and -4.4987×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> ±3.5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> by BIPM-2 separately. We assume the relative difference 1.8×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> is due to the drift of the 100 Ω transfer resistor. More stable resistor will be used in future experiments.
What problem does this paper attempt to address?