Abstract:The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to achieve a quantum resistance standard with an accuracy of the order of \(10^{-9}\) under the condition of zero external magnetic field. Specifically, the research focuses on: 1. **Application of Quantum Anomalous Hall Effect (QAHE)**: By using the magnetic topological insulator material \((V, Bi, Sb)_2Te_3\), the quantization of Hall resistance is achieved under zero external magnetic field. This provides a new method for resistance quantization, while traditional methods rely on strong magnetic fields. 2. **Improving Measurement Precision and Accuracy**: The research aims to reduce the relative deviation between Hall resistance and von Klitzing constant \(R_K=\frac{h}{e^2}\) to the level of \(10^{-9}\). This is crucial for achieving a high - precision resistance standard, especially in the absence of an external magnetic field. 3. **Integrated Quantum Electrical Reference System**: By achieving the quantum resistance standard under zero external magnetic field, it can be combined with the Josephson voltage standard to construct an integrated and universal quantum electrical reference system. This is of great significance for future metrology applications. ### Specific Problems and Solutions - **Limitations of Traditional QHRS**: Traditional quantum Hall resistance standard (QHRS) depends on strong magnetic fields (such as superconducting solenoids), which limits its practical applications and makes it difficult to integrate with the Josephson voltage standard (JVS). - **Advantages of QAHE**: The quantum anomalous Hall effect in magnetic topological insulators can achieve the quantization of Hall resistance under zero external magnetic field, thus solving the above - mentioned problems. - **Experimental Challenges**: In order to achieve high - precision measurement, some technical challenges need to be overcome in the research, such as extremely low temperature (usually below 50 mK) and low bias current (usually far below 1 µA). In addition, the insulation performance of the device needs to be optimized to avoid the short - circuit effect of the edge channels. ### Experimental Results Through precise experimental measurements, the research team showed that under zero external magnetic field, the relative deviations between Hall resistance and \(R_K\) are: - When extrapolated to zero measurement current: \((4.4\pm8.7)\times 10^{-9}\) - When extrapolated to zero longitudinal resistivity: \((8.6\pm6.7)\times 10^{-9}\) These results indicate that a high - precision quantum resistance standard has been achieved under the condition of zero external magnetic field, reaching the relative uncertainty level of \(10^{-9}\), laying the foundation for future quantum electrical reference systems.

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