Engineering Cyber-Physical Systems: Challenges and Foundations

M. Broy

DOI: https://doi.org/10.1007/978-3-642-34404-6_1

Abstract:

What problem does this paper attempt to address?

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

T J B M Janssen,S Rozhko,I Antonov,A Tzalenchuk,J M Williams,Z Melhem,H He,S Lara-Avila,S Kubatkin,R Yakimova

DOI: https://doi.org/10.1088/2053-1583/2/3/035015

IF: 6.861

2015-08-19

2D Materials

Abstract:We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8 K and magnetic fields below 5 T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC.

materials science, multidisciplinary
Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Ping Lin,Fernando Camino,V. J. Goldman

DOI: https://doi.org/10.1103/physrevb.78.245322

2009-01-01

Abstract:We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultralow temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in the two-dimensional electron layer, enclosing an approximately circular island. Front gates deposited in etch trenches allow one to change the constriction filling, relative to the bulk. A systematic variation of the front-gate voltage affects the constriction and the island electron density, while the bulk density remains unaffected. This results in quantized plateaus in longitudinal resistance, while the Hall resistance is dominated by the low-density, low-filling constriction. At lower fields, when the quantum Hall plateaus fail to develop, we observe bulk Shubnikov-de Haas oscillations in series corresponding to an integer filling of the magnetoelectric subbands in the constrictions. This shows that the whole interferometer region is still quantum coherent at these lower fields at 10 mK. Analyzing the data within a Fock-Darwin model, we obtain the constriction electron density as a function of the front-gate bias and, extrapolating to the zero field, the number of electric subbands (conductance channels) resulting from the electron confinement in the constrictions.
[Epiphora as the leading symptom of Urbach-Wiethe syndrome in a sibling pair].

H. Knorr,H. Meythaler,G. Naumann

Abstract:Urbach-Wiethe-Syndrom. syn. Hyalinosis cutis et mucosae is a rare, probably autosomal-recessively inherited disease. In the first weeks of life it begins with typical hoarness due to hyalin deposits in larynx and with increasing age leads to different changes in mucous membrane and later on in cutis. Etiology and pathogenesis are unknown. The treatment is only symptomatic. In our casuistic we present two sisters, who are constantly full of tears. Either show different stage of the typical representation of Hyalinosis cutis et mucosae. We demonstrate progression and penetrance of the disease and clinical alterations in eyes, skin and mucous membrane.
Precision comparison of the quantum Hall effect in graphene and gallium arsenide

T.J.B.M. Janssen,J.M. Williams,N.E. Fletcher,R. Goebel,A. Tzalenchuk,R. Yakimova,S. Lara-Avila,S. Kubatkin,V.I. Fal'ko

DOI: https://doi.org/10.1088/0026-1394/49/3/294

2012-02-14

Abstract:The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

Mesoscale and Nanoscale Physics
Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Albert F. Rigosi Linsey K. Rodenbach,Alireza R. Panna,Shamith U. Payagala,Ilan T. Rosen,Joseph A. Hagmann,Peng Zhang,Lixuan Tai,Kang L. Wang,Dean G. Jarrett,Randolph E. Elmquist,Jason M. Underwood,David B. Newell,David Goldhaber-Gordon

DOI: https://doi.org/10.48550/arXiv.2205.06077

2022-05-12

Abstract:Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard.

Mesoscale and Nanoscale Physics,Materials Science
Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

A. Satrapinski,S. Novikov,N. Lebedeva

DOI: https://doi.org/10.1063/1.4826641

2013-08-02

Abstract:Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator resistance bridge with high biasing current Isd = 40 micro ampere. The results showed that at B = 8 T the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

Mesoscale and Nanoscale Physics
Room-Temperature Quantum Hall Effect in Graphene

K. S. Novoselov,Z. Jiang,Y. Zhang,S. V. Morozov,H. L. Stormer,U. Zeitler,J. C. Maan,G. S. Boebinger,P. Kim,A. K. Geim

DOI: https://doi.org/10.1126/science.1137201

IF: 56.9

2007-03-09

Science

Abstract:The quantum Hall effect (QHE), one example of a quantum phenomenon that occurs on a truly macroscopic scale, has attracted intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE has been observed only at liquid-helium temperatures. We show that in graphene, in a single atomic layer of carbon, the QHE can be measured reliably even at room temperature, which makes possible QHE resistance standards becoming available to a broader community, outside a few national institutions.

multidisciplinary sciences
Star-Mesh Quantized Hall Array Resistance Devices

Dean G. Jarrett,Ching-Chen Yeh,Shamith U. Payagala,Alireza R. Panna,Yanfei Yang,Linli Meng,Swapnil M. Mhatre,Ngoc Thanh Mai Tran,Heather M. Hill,Dipanjan Saha,Randolph E. Elmquist,David B. Newell,Albert F. Rigosi

2023-04-22

Abstract:Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nominal values between 1 k{\Omega} and 1.29 M{\Omega}. One of these QHARS device designs accommodates a value of about 1.01 M{\Omega}, which made it an ideal candidate to pursue a proof-of-concept that graphene-based QHARS devices are suitable for forming wye-delta resistance networks. In this work, the 1.01 M{\Omega} array output nearly 20.6 M{\Omega} due to the wye-delta transformation, which itself is a special case of star-mesh transformations. These mathematical equivalence principles allow one to extend the QHR to the 100 M{\Omega} and 10 G{\Omega} resistance levels with fewer array elements than would be necessary for a single array with many more elements in series. The 1.01 M{\Omega} device shows promise that the wye-delta transformation can shorten the calibration chain, and, more importantly, provide a chain with a more direct line to the quantum SI.

Mesoscale and Nanoscale Physics,Materials Science
Fabrication of quantum Hall p-n junction checkerboards

Dinesh K. Patel,Martina Marzano,Chieh-I Liu,Mattias Kruskopf,Randolph E. Elmquist,Chi-Te Liang,Albert F. Rigosi

DOI: https://doi.org/10.48550/arXiv.2203.06480

2022-03-13

Abstract:Measurements of fractional multiples of the {\nu}=2 plateau quantized Hall resistance (R_H {\approx} 12906 {\Omega}) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.

Mesoscale and Nanoscale Physics
Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli

Chieh-I Liu,Dinesh K. Patel,Martina Marzano,Mattias Kruskopf,Heather M. Hill,Albert F. Rigosi

DOI: https://doi.org/10.48550/arXiv.2201.09864

2022-01-25

Abstract:The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $\nu=2$ plateau ($R_H\approx 12906 {\Omega}$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could output resistance. Most importantly, these measurements support simpler processes of ultraviolet lithography as a more efficient means of scaling up graphene-based device sizes while maintaining sufficiently narrow junctions.

Mesoscale and Nanoscale Physics
High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Siyu Zhou,Mengjian Zhu,Qiang Liu,Yang Xiao,Ziru Cui,Chucai Guo

DOI: https://doi.org/10.3390/nano12213777

2022-10-26

Abstract:Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d'unités.
Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device

Lingxiu Chen,HuiShan Wang,Ziqiang Kong,Changwei Zhai,Xiujun Wang,Yibo Wang,Zhengtai Liu,Chengxin Jiang,Chen Chen,Dawei Shen,Xipin Chen,Yuxuan Zhu,Wenzhong Bao,Zhenyu Yang,Yunfeng Lu,Haomin Wang

DOI: https://doi.org/10.1002/admt.202201127

IF: 6.8

2022-12-06

Advanced Materials Technologies

Abstract:High‐quality graphene is fabricated on silicon carbide (SiC (0001)) at ≈1300 °C via gaseous catalyst‐assisted chemical vapor deposition. The growth of graphene at a low temperature can keep the step of SiC terraces at a small height of ≈0.5 nm, and then ensures the successful fabrication of a quantum Hall resistance standard device working under 6 T. Direct growth of graphene on silicon carbide (SiC) is a very promising method for preparing high‐quality graphene. However, high quality single crystal epitaxial graphene films on SiC always form at a temperature higher than 1800 °C. Here, the synthesis of graphene on the silicon surface (0001) of SiC at ≈1300 °C by gaseous catalyst‐assisted chemical vapor deposition (CVD) method is reported. As the step height of terraces on SiC surface can influence the performance of graphene Hall devices, low‐temperature growth of graphene benefits for keeping the steps of the SiC surface at a small height, which can be achieved by a pre‐treatment before growth. A graphene quantum Hall resistance standard (G‐QHRS) device fabricated on the SiC surface with a small step height of ≈0.5 nm exhibits an accuracy of 1.15 × 10−8 and a reproducibility of 3.6 × 10−9 within 7 days in the measurement of quantum resistance at B = 6 T and T = 4.5 K. The gaseous catalyst‐assisted CVD on SiC is an effective scalable growth approach that produces high‐quality graphene for the resistance metrology, and it represents a promising step toward a low magnetic field QHRS setting the basis of low‐cost and transportable QHRS in a near future.

materials science, multidisciplinary
Fractal-like star-mesh transformations using graphene quantum Hall arrays

Dominick S. Scaletta,Swapnil M. Mhatre,Ngoc Thanh Mai Tran,Cheng-Hsueh Yang,Heather M. Hill,Yanfei Yang,Linli Meng,Alireza R. Panna,Shamith U. Payagala,Randolph E. Elmquist,Dean G. Jarrett,David B. Newell,Albert F. Rigosi

2023-09-28

Abstract:A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 E{\Omega}, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the nu=2 plateau (R_H = 12906.4 {\Omega}) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances

Mesoscale and Nanoscale Physics,Applied Physics
Realization of 5 h e 2 with graphene quantum Hall resistance array

Jaesung Park,Wan-Seop Kim,Dong-Hun Chae

DOI: https://doi.org/10.1063/1.5139965

IF: 4

2020-03-02

Applied Physics Letters

Abstract:We report on the realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a filling factor of 2 is equivalent to 5 h e 2 within the measurement uncertainty of approximately 4 × 10−8. A quantum Hall phase diagram for the array shows that a metrological quantization of 5 h e 2 can be achieved at the magnetic field of 6 T and a temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.

physics, applied
Marking the Graphene Era in Disseminating the Redefined SI

Albert F. Rigosi

DOI: https://doi.org/10.48550/arXiv.2202.05952

2022-02-12

Abstract:The history of quantum Hall standards stretches several decades and mostly begins with the use of GaAs given that 2D electron systems exhibit interesting quantum phenomena. At the end 2000s, research in 2D materials like graphene became prevalent. The QHE was observed and quickly became accessible to metrologists. QHR devices were becoming graphene-based, with fabrications performed by chemical vapor deposition (CVD), epitaxial growth, and the exfoliation of graphite. Given the many methods of available graphene synthesis, efforts to find an optimal synthesis method for metrological purposes were underway. Exfoliated graphene was widely known to exhibit the highest mobilities due to its pristine crystallinity. It was a primary initial candidate as far as metrological testing was concerned.

Mesoscale and Nanoscale Physics
Analytical determination of atypical quantized resistances in graphene p-n junctions

Albert F Rigosi,Martina Marzano,Antonio Levy,Heather M Hill,Dinesh K Patel,Mattias Kruskopf,Hanbyul Jin,Randolph E Elmquist,David B Newell

Abstract:A mathematical approach is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the v = 2 plateau (R H ≈ 12906 Ω) and take the form: a b R H . This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals.
Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

Anubhab Dey,Nathan Cottam,Oleg Makarovskiy,Wenjing Yan,Vaidotas Mišeikis,Camilla Coletti,James Kerfoot,Vladimir Korolkov,Laurence Eaves,Jasper F. Linnartz,Arwin Kool,Steffen Wiedmann,Amalia Patanè

2023-05-26

Abstract:The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau can be achieved at room temperature in relatively modest magnetic fields. This phenomenon offers the prospect for the controlled manipulation of the quantum Hall effect at room temperature.

Mesoscale and Nanoscale Physics
A four-terminal-pair Josephson impedance bridge combined with a graphene-quantized Hall resistance

S Bauer,R Behr,R E Elmquist,M Gtz,J Herick,O Kieler,M Kruskopf,J Lee,L Palafox,Y Pimsut,J Schurr,M Götz

DOI: https://doi.org/10.1088/1361-6501/abcff3

IF: 2.398

2021-03-31

Measurement Science and Technology

Abstract:Abstract This paper introduces a four-terminal-pair impedance bridge based on pulse-driven Josephson junctions arrays which is designed to link any kind of impedance to the quantized Hall resistance. The unique features of the quantized Hall resistance in a multiple series connection allows to dispense a combining network and leads to a compact and simple design of the whole setup. Moreover, the low noise of a quantized Hall resistance reduces the measurement time compared to resistance standards at room temperature which is essential for the characterization of quantum Hall devices in the AC regime. A first measurement campaign confirmed the expected low noise of 1.82 n V / H z for a link to a 10 nF capacitance standard. The repeatability of the bridge was found to be few parts in 10 8 . Capacitance and resistance standards were measured at 1233.15 Hz against graphene based quantum Hall resistance devices.

engineering, multidisciplinary,instruments & instrumentation
Balanced Quantum Hall Resistor

Kajetan M. Fijalkowski,Nan Liu,Martin Klement,Steffen Schreyeck,Karl Brunner,Charles Gould,Laurens W. Molenkamp

DOI: https://doi.org/10.1038/s41928-024-01156-6

2024-02-07

Abstract:The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.

Mesoscale and Nanoscale Physics,Instrumentation and Detectors
Integer and Fractional Quantum Hall Effect in Two-Terminal Measurements on Suspended Graphene

I. Skachko,X. Du,F. Duerr,A. Luican,D. A. Abanin,L. S. Levitov,E.Y.Andrei

DOI: https://doi.org/10.1098/rsta.2010.0226

2009-10-14

Abstract:We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic samples. New quantized states are found at integer Landau level fillings outside the sequence 2,6,10.., as well as at a fractional filling \nu=1/3. Their presence is revealed by plateaus in the two-terminal conductance which appear in magnetic fields as low as 2 Tesla at low temperatures and persist up to 20 Kelvin in 12 Tesla. The excitation gaps, extracted from the data with the help of a theoretical model, are found to be significantly larger than in GaAs based electron systems.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

Engineering Cyber-Physical Systems: Challenges and Foundations

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

[Epiphora as the leading symptom of Urbach-Wiethe syndrome in a sibling pair].

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

Room-Temperature Quantum Hall Effect in Graphene

Star-Mesh Quantized Hall Array Resistance Devices

Fabrication of quantum Hall p-n junction checkerboards

Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device

Fractal-like star-mesh transformations using graphene quantum Hall arrays

Realization of 5 h e 2 with graphene quantum Hall resistance array

Marking the Graphene Era in Disseminating the Redefined SI

Analytical determination of atypical quantized resistances in graphene p-n junctions

Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

A four-terminal-pair Josephson impedance bridge combined with a graphene-quantized Hall resistance

Balanced Quantum Hall Resistor

Integer and Fractional Quantum Hall Effect in Two-Terminal Measurements on Suspended Graphene