Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

A. Satrapinski,S. Novikov,N. Lebedeva

DOI: https://doi.org/10.1063/1.4826641

2013-08-02

Abstract:Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator resistance bridge with high biasing current Isd = 40 micro ampere. The results showed that at B = 8 T the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to achieve high - precision quantum Hall resistance (QHR) measurement of large - area epitaxial graphene devices under low magnetic fields (2 T - 8 T) and relatively high temperatures (1.5 K). Specifically, the research objectives include:

1. **Verify the quantum Hall effect under low magnetic fields**: Explore whether stable quantum Hall resistance plateaus can be observed under lower magnetic fields (such as 2 T), and evaluate their quantization accuracy.

2. **Improve measurement current and temperature conditions**: Conduct measurements at a higher measurement current (40 µA) and relatively high temperature (1.5 K) than in previous studies to explore the influence of these conditions on the quantum Hall effect in epitaxial graphene devices.

3. **Application prospects**: Evaluate the application potential of epitaxial graphene as a future quantum resistance standard, especially under low - magnetic - field conditions.

### Specific problems and solutions

- **Quantum Hall effect under low - magnetic - field conditions**:
Researchers carried out precise Hall resistance measurements in the magnetic field range from 2 T to 8 T by using a cryogenic current comparator (CCC) resistance bridge. The results show that at 8 T, the relative deviation of the Hall resistance with respect to the expected quantization value \( \frac{h}{2e^2} \) is 3.5 parts in \( 10^8 \) within the experimental uncertainty range, and remains below 0.35 ppm below 3 T.

- **High measurement current and temperature conditions**:
By applying a higher bias current (40 µA), researchers were able to conduct measurements at a relatively high temperature (1.5 K), which helps to understand the performance of the quantum Hall effect under these conditions. The experimental results show that even under these conditions, the quantum Hall effect still exhibits good quantization characteristics.

- **Application prospects**:
The research results show that the quantum Hall effect of epitaxial graphene under low - magnetic - field conditions has high precision and stability, indicating its good application prospects as a future quantum resistance standard. In particular, after reducing the carrier concentration through photochemical gating technology, the electron mobility is significantly increased, further enhancing its potential as a standard material.

### Conclusion
This research has achieved high - precision QHR measurement under low magnetic fields (2.5 T - 4 T) for the first time and demonstrated the excellent performance of epitaxial graphene under these conditions, providing important experimental basis and technical support for further development of graphene - based quantum resistance standards.