Abstract:Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d'unités.

Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe

Realization of 5 h e 2 with graphene quantum Hall resistance array

Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

Gate-Tunable Graphene Hall Sensors with High Magnetic Field Sensitivity

Room-Temperature Quantum Hall Effect in Graphene

Quantum Thermal Hall Effect In Graphene

Integer and Fractional Quantum Hall Effect in Two-Terminal Measurements on Suspended Graphene

Probe of Local Impurity States by Bend Resistance Measurements in Graphene Cross Junctions

Precision measurement of the quantized anomalous Hall resistance at zero magnetic field

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Zero external magnetic field quantum standard of resistance at the 10-9 level

Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli

Fabrication of quantum Hall p-n junction checkerboards

Landau-Level Splitting in Graphene in High Magnetic Fields