Abstract:Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a Cooper pairs QPC analogue known as superconducting quantum point contact (SQPC). The technological development of such quantum devices has been prolonged due to the challenges of maintaining their geometrical requirement and near-unity superconductor-semiconductor interface transparency. Here, we develop advanced nanofabrication, material and device engineering techniques and report on an innovative realisation of nanoscale SQPC arrays with split gate technology in semiconducting 2D electron systems, exploiting the special gate tunability of the quantum wells, and report the first experimental observation of conductance quantization in hybrid InGaAs-Nb SQPCs. We observe reproducible quantized conductance at zero magnetic fields in multiple quantum nanodevices fabricated in a single chip and systematically investigate the quantum transport of SQPCs at low and high magnetic fields for their potential applications in quantum metrology, for extremely accurate voltage standards, and fault-tolerant quantum technologies.

GaAs/AlGaAs Quantum Hall Resistance Devices with AuGeNi and in Contacts

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Investigation of single quantum Hall device of resistance standard in NIM

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

Development of QHR Arrays in NIM

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Gate-defined quantum point contacts in a germanium quantum well

Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe

Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Fabrication of quantum Hall p-n junction checkerboards

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Design and Fabrication of Ohmic Contact on AlGaN/GaN Heterostructure

Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

Material Preparation and Fabrication of Graphene-Based Quantum Hall Resistance Devices

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Development of single quantum Hall devices for the resistance standard in NIM