A High Precision Threshold Voltage Readout Method for Flash Memory

Bo Yang,Dong Wu,Da Huang
DOI: https://doi.org/10.1109/isne.2016.7543279
2016-01-01
Abstract:A readout circuit for flash memory threshold voltage distribution is proposed in this paper. This circuit includes ramp generator circuit, comparator and 9-bit counter which converts threshold voltage into digital outputs. Besides, word line and bit line decoder, high voltage generator, bias module and timing control circuit are integrated as peripheral circuit. This chip is fabricated by 0.13 μm 2P3M NOR flash memory process with 128Mb cells. The experimental results show that this readout circuit can depict threshold voltage distribution accurately. Additionally, it also can be used to analysis discreteness of memory cells and improve program/erase algorithms.
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