A Low-Voltage Sense Amplifier for High-Performance Embedded Flash Memory

Liu Jiang,Wang Xueqiang,Wang Qin,Wu Dong,Zhang Zhigang,Pan Liyang,Liu Ming
DOI: https://doi.org/10.1088/1674-4926/31/10/105001
2010-01-01
Journal of Semiconductors
Abstract:This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.
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