Abstract:Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. Along these lines, in this work, the structure, storage mechanism, and improvement strategies of UltraRAM were systematically investigated to enhance storage window clarity and speed performance. First, the basic structure and working principle of UltraRAM were introduced, and its comparative advantages over traditional memory devices were highlighted. Furthermore, through the validation of the band structure and storage mechanism, the superior performance of UltraRAM, including its low operating voltage and excellent non-volatility, was further demonstrated. To address the issue of the small storage window, an improvement strategy was proposed by reducing the thickness of the channel layer to increase the storage window. The feasibility of this strategy was validated by performing a series of simulation-based experiments. From our analysis, a significant 80% increase in the storage window after thinning the channel layer was demonstrated, providing an important foundation for enhancing the performance of UltraRAM. Additionally, the data storage capability of this strategy was examined under the application of short pulse widths, and a data storage operation with a 10 ns pulse width was successfully achieved. In conclusion, valuable insights into the application of UltraRAM in the field of non-volatile storage were provided. Our work paves the way for further optimizing the memory performance and expanding the functionalities of UltraRAM.

A Novel Voltage-Type Sense Amplifier for Low-Power Nonvolatile Memories

A Low-Voltage Sense Amplifier for High-Performance Embedded Flash Memory

A High-Performance Wordline Voltage-Generating System for Low-Power Low-Voltage Flash Memory

A Low-Power, Single-Poly, Non-Volatile Memory for Passive RFID Tags

Design of a High-Speed and Automatically Swiched Precharge Sense Amplifier

Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

A Pure Logic Cmos Based Low Power Non-Volatile Random Access Memory For Rfid Application

A Novel 2 T P-Channel Nano- Crystal Memory for Low Power/High Speed Embedded Nvm Applications

TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory

A 0.75 V Reference Clamping Sense Amplifier for Low-Power High-Density ReRAM with Dynamic Pre-Charge Technique

Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

A Fully Logic CMOS Compatible Non-Volatile Memory for Low Power IoT Applications

A Current Mode Sense Amplifier with Self-Compensation Circuit for Sram Application

Circuits and Implementation of a Low-Power Embedded EEPROM Memory

High Speed Sense Amplifier Circuit for Low-Voltage SONOS Memory Systems

A High Speed Low Power Negative Sensing Architecture for 3d Nand Flash Memory

Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory

Design Of Almost-Nonvolatile Embedded Dram Using Nanoelectromechanical Relay Devices