Abstract:As technology scales, more sophisticated fabrication processes cause variations in many different parameters in the device. These variations could severely affect the performance of processors by making the latency of circuits less predictable and thus requiring conservative design approaches. In this paper, we use Monte Carlo simulations in addition to worst-case circuit analysis to establish the overall delay due to process variations in a data cache sub-system under both typical and worst-case conditions. The distribution of the cache critical-path-delay in the typical scenario was determined by performing Monte Carlo simulations at different supply voltages, threshold voltages, and transistor lengths on a complete cache design. In addition to establishing the delay variation, we present an adaptive variable-cycle-latency cache architecture that mitigates the impact of process variations on access latency by closely following the typical latency behavior rather than assuming a conservative worst-case design-point. Simulation results show that our adaptive data cache can achieve a 9% to 31% performance improvement in a superscalar processor, on the SPEC2000 applications studied, compared to a conventional design. The area overhead for the additional circuits of the adaptive technique has less than 1% of the total cache area. Additional performance improvement potential exists in processors where the data cache access is on the critical path, by allowing a more aggressive clock rate.

Features Non-Volatile Processor : Circuit , System , and Software

A High-Performance Wordline Voltage-Generating System for Low-Power Low-Voltage Flash Memory

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

Offset Voltage Suppressed Sense Amplifier with Self-Adaptive Distribution Transformation Technique

A Current Mode Sense Amplifier with Self-Compensation Circuit for Sram Application

A Low-Voltage Sense Amplifier for High-Performance Embedded Flash Memory

Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier

Low-Power High-Yield Sram Design With Vss Adaptive Boosting And Bl Capacitance Variation Sensing

A Non-Volatile Computing-In-Memory Framework with Margin Enhancement Based CSA and Offset Reduction Based ADC.

High Speed Sense Amplifier Circuit for Low-Voltage SONOS Memory Systems

Eliminating Timing Errors Through Collaborative Design to Maximize the Throughput

An Area-Efficient Dual Replica-Bitline Delay Technique For Process-Variation-Tolerant Low Voltage Sram Sense Amplifier Timing

A Timing Failure Tolerance Design with In-Field Simultaneous Error Detection and Correction.

Design of a High-Speed and Automatically Swiched Precharge Sense Amplifier

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

A low power and high speed 45 nm CMOS dynamic comparator with low offset

Data Memory Subsystem Resilient to Process Variations

A Variation-Tolerant Near-Threshold Processor with Instruction-Level Error Correction

A Multi-Bit Quantization Low-Latency Voltage Sense Amplifier Applied in RRAM Computing-in-Memory Macro Circuits

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory with A Sensing Current Protection Technique

A 130-Nm Ferroelectric Nonvolatile System-on-Chip with Direct Peripheral Restore Architecture for Transient Computing System