Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

Yang Feng,Bing Chen,Mingfeng Tang,Yuerang Qi,Maoying Bai,Chengcheng Wang,Hai Wang,Xuepeng Zhan,Junyu Zhang,Jing Liu,Jixuan Wu,Jiezhi Chen
DOI: https://doi.org/10.1007/s11432-022-3743-x
2023-01-01
Abstract:We propose a NOR flash-based computing-in-memory (CIM) to implement high-precision (32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized, showing that the power consumption at the near-threshold-voltage (NTV) region can be as low as 40 fJ/bit, which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.
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