Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications

Hongyang Hu,Chuancai Feng,Haiyang Zhou,Danian Dong,Xiaoshan Pan,Xiwei Wang,Lu Zhang,Shuaiqi Cheng,Wan Pang,Jing Liu
DOI: https://doi.org/10.3390/mi14061175
IF: 3.4
2023-06-01
Micromachines
Abstract:In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of non-volatile devices. In this paper, we propose a fully digital non-volatile CIM (DNV-CIM) macro with compressed coding look-up table (LUT) multiplier (CCLUTM) using the 40 nm technology, which is highly compatible with the standard commodity NOR Flash memory. We also provide a continuous accumulation scheme for machine learning applications. When applied to a modified ResNet18 network trained under the CIFAR-10 dataset, the simulations indicate that the proposed CCLUTM-based DNV-CIM can achieve a peak energy efficiency of 75.18 TOPS/W with 4-bit multiplication and accumulation (MAC) operations.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
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