Specific ADC of NVM-Based Computation-in-Memory for Deep Neural Networks

Ao Shi,Yizhou Zhang,Lixia Han,Zheng Zhou,Yiyang Chen,Haozhang Yang,Lifeng Liu,Linxiao Shen,Xiaoyan Liu,Jinfeng Kang,Peng Huang
DOI: https://doi.org/10.1109/tcsi.2024.3430290
2024-01-01
Abstract:Non-volatile memory (NVM)-based Computation-in-memory has demonstrated a significant advantage inhigh-efficiency neural networks. However, the requirement ofanalog-to-digital converter (ADC) and post-processing circuitsnot only cost high energy and area but also results in high com-putation errors, which tradeoffs the performance boost broughtby CIM. Here, we present a specific ADC and post-processingcircuit of the NVM-based CIM neural network to address theseissues. The main contributions include: (1) A novel residualcharge accumulation function (RCA) is designed to achievecharge-domain summation of quantized partial sum and reduces38% quantization error; (2) Charge reset is introduced in theintegrate & fire circuit to realize<1 LSB INL at +/- 7 bits and aspeed of 285MHz/LSB; (3) Sample & hold, current subtraction,and bidirectional counter are designed to improve 3.95xenergyefficiency and 2.48xarea efficiency. Evaluation based on themeasured results of the fabricated chip shows that the VGG-11neural network with the proposed ADC circuit can achieve a3.28-time improvement in energy efficiency while maintainingthe same network recognition rate
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