Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Improve the Transconductance of a Graphene Field-Effect Transistor by Folding Graphene into a Wedge

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

Computational Study of Graphene-Based Vertical Field Effect Transistor

Optimizing the fabrication process for high performance graphene field effect transistors.

A Theoretical Study of Internal Electric Field Tuned Field Emission from Folded Graphene

The Gate Leakage Current in Graphene Field-Effect Transistor

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Tunable Transport Characteristics of Double-Gated Graphene Field-Effect Transistors Using P(VDF-TrFE) Ferroelectric Gating

Back-Gate Graphene Field-Effect Transistors with Double Conductance Minima

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Three-Dimensional Micro-Channel Structure of Graphene Field-Effect Transistor

Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Evolution of Graphene Dirac Fermions in Electric Double‐Layer Transistors with a Soft Barrier (Adv. Funct. Mater. 34/2024)