Comparative Studies of the Electronic Structure and Thermoelectric Properties in Orthorhombic and Tetragonal BaCu2Se2 by First-Principles Calculations

Daifeng Zou,Hairong Zheng,Jiangyu Li

DOI: https://doi.org/10.1039/c6ra10266b

IF: 4.036

2016-01-01

RSC Advances

Abstract:Results show that the thermoelectric performance of tetragonal β-BaCu2Se2 is superior to orthorhombic α-BaCu2Se2.

What problem does this paper attempt to address?

Thermoelectric Properties of Strained -Cu2Se

Wei Cao,Ziyu Wang,Ling Miao,Jing Shi,Rui Xiong

DOI: https://doi.org/10.1021/acsami.1c08686

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In recent years, the high-temperature phase of Cu2Se, namely, beta-Cu2Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in beta-Cu2Se show a distinct ion-liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized beta-Cu2Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type beta-Cu2Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained beta-Cu2Se. The results show that the n-type beta-Cu2Se can exhibit superior zT values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type zT values. The predicted maximum zT values for n-type and p-type beta-Cu2Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu2Se-based thermoelectric devices.
First-principles study on the electronic properties of BaCu2S2

G.B. Liu,X.Q. Wang,X.J. Kuang,A L. He

DOI: https://doi.org/10.1016/j.physb.2010.08.044

2010-01-01

Abstract:Using the pseudopotential plane-wave method under the density functional theory (DFT), the electronic properties of BaCu2S2 in α and β phases are calculated. The result shows that the bottom conduction band is mainly made of Ba 5d state, while the upper valence band is formed by S 3p and Cu 4d states, but both of them for β-BaCu2S2 are wider than those for α-BaCu2S2. The electron and hole effective masses for BaCu2S2 are also analyzed in detail. It is found that β-BaCu2S2 has very small hole effective masses, which implies that β-BaCu2S2 may possess a high hole mobility. Moreover, its hole effective masses are extremely anisotropic along ab plane and c axis. These properties are helpful to enhance its Seebeck coefficient, and means that β-BaCu2S2 could be a good candidate of thermoelectric materials.
Cu vacancy engineering of cage-compound BaCu2Se2: Realization of temperature-dependent hole concentration for high average thermoelectric figure-of-merit

Tianyao Weng,Zhili Li,Yang Li,Yao Hu,Kai Guo,Tao Liu,Jianxin Zhang,Wanyu Lyu,Lili Xi,Xinxin Yang,Ying Jiang,Jiong Yang,Jiye Zhang,Jun Luo

DOI: https://doi.org/10.1016/j.cej.2022.135302

IF: 15.1

2022-06-01

Chemical Engineering Journal

Abstract:Vacancy engineering offers an alternative route to aliovalent and interstitial doping for optimization of the carrier concentration in thermoelectric materials. For the wide-bandgap semiconductor BaCu2Se2, the Cu vacancy is dynamically stable; this feature can be rationally manipulated to maximize the thermoelectric figure of merit zT. In this work, we show that at room temperature, Cu-deficient BaCu2− x Se2 samples exhibit increased hole effective mass and mobility, attributed to the energy band modulation, which are favorable for improved electrical transport properties. More importantly, the defect energy level resulting from the Cu vacancies continually contributes holes at high temperature, thereby allowing the hole concentration to approach an optimal concentration. This effect leads to an increase of the power factors over a wide temperature range. The artificial reduction of the Cu content in BaCu2Se2 results in the strengthened point-defect scattering, suppressing the lattice thermal conductivity. This strategy allows simultaneous optimization of the electrical and thermal transport properties, with a thermoelectric figure of merit zT = 1.08 achieved for BaCu1.94Se2 at 823 K, which is 38% higher than that of stoichiometric BaCu2Se2. Within the measured temperature range, the average zT value for BaCu1.94Se2 is 0.494, which is 52.9% higher than that of BaCu2Se2.

engineering, chemical, environmental
First-Principles Study on Thermoelectric Properties of Bi _2 O _2 Se

Renqi Zhang,Li Ye,Bo Zhou,Suiting Ning,Wei Li,Chaoyong Wang,Zhiquan Chen

DOI: https://doi.org/10.1007/s11664-023-10327-8

IF: 2.1

2023-01-01

Journal of Electronic Materials

Abstract:Compared with traditional thermoelectric (TE) materials, bismuth oxyselenide (Bi _2 O _2 Se) consists of nontoxic and lower-cost elements and has better chemical and thermal stability. The highest ZT value of Bi _2 O _2 Se ever obtained experimentally was recently reported at 0.69. To further improve its TE performance, the electron and phonon transport properties of intrinsic n-type Bi _2 O _2 Se are evaluated by first-principles calculations. Due to the density of states at the conduction band minimum being too small resulting in a low intrinsic carrier concentration, the reported TE properties of Bi _2 O _2 Se are not ideal. The TE parameters we calculated are in good agreement with the experimental values. The average optimal ZT values at 800 K for the p-type and n-type Bi _2 O _2 Se are 1.83 and 1.81, respectively, indicating that Bi _2 O _2 Se is a promising TE material. It is an innovative approach to improve the TE performance by regulating the vacancy defects in Bi _2 O _2 Se, which could achieve the cooperative optimization of electrons and phonons through the energy filtering effect and enhanced phonon scattering. Our results could provide a theoretical basis for further improving the TE properties of Bi _2 O _2 Se in experiments.
Enhanced Stability and Thermoelectric Performance in Cu1.85Se-Based Compounds

Jing Jiang,Chengcheng Yang,Yi Niu,Jie Song,Chao Wang

DOI: https://doi.org/10.1021/acsami.1c08886

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Liquid-like copper selenium compounds have attracted considerable interest in recent years for their excellent thermoelectric performance, abundant element reserves, and low toxicity. However, the related applications are still limited due to the phase transition and precipitation of Cu under an external field. Here, the cubic Cu1.85Se-based compounds with suppressed phase transition and improved critical voltage (V-c) are first studied. In particular, Li/Bi co-doping effectively optimizes hole concentration and the ZTs are substantially improved from 0.2 in Cu1.85Se to 0.7 in Li0.03Cu1.81Bi0.04Se at 760 K. Meanwhile, the latter shows an outstanding V-c above 0.22 V at 750 K, which is the highest value in Cu2-xSe thermoelectric compounds to date. Moreover, S is alloyed in Li0.03Cu1.81Bi0.04Se to greatly reduce the thermal conductivity and the ZT is further enhanced to 0.9 for Li0.03Cu1.81Bi0.04Se0.9S0.1 at 760 K. Our work sheds light on a new strategy to realize good stability and enhanced thermoelectric performance, which provides a new direction for further research.
Thermoelectric Properties of Strained β-Cu 2 Se

Wei Cao,Ziyu Wang,Ling Miao,Jing Shi,Rui Xiong

DOI: https://doi.org/10.1021/acsami.1c08686

2021-07-20

Abstract:In recent years, the high-temperature phase of Cu2Se, namely, β-Cu2Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in β-Cu2Se show a distinct ion–liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized β-Cu2Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type β-Cu2Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained β-Cu2Se. The results show that the n-type β-Cu2Se can exhibit superior zT values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type zT values. The predicted maximum zT values for n-type and p-type β-Cu2Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu2Se-based thermoelectric devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08686?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08686</a>.The method for electrical transport properties, structural stability analysis, the method for lattice thermal conductivity, electronic thermal conductivity, and zT values calculated by the lattice thermal conductivity from molecular dynamics simulations, formation energy of β-Cu2Se, and formation energy of doped β-Cu2Se (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08686/suppl_file/am1c08686_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Bacu2se2 Based Compounds As Promising Thermoelectric Materials

Jing Li,Li-Dong Zhao,Jiehe Sui,David Berardan,Wei Cai,Nita Dragoe

DOI: https://doi.org/10.1039/c4dt03556a

IF: 4

2015-01-01

Dalton Transactions

Abstract:In the past few years, many studies have been devoted to the thermoelectric properties of copper selenides and sulfides, and several families of materials have been developed with promising performances. In this paper, we report on the synthesis and thermoelectric properties of Na-doped BaCu2Se2 from 20 K to 773 K. By Na doping at the Ba site, the electrical conductivity can be increased by 2 orders of magnitude, and the power factor can reach 8.2 μW cm(-1) K(-2) at 773 K. Combined with a low thermal conductivity of 0.65 W m(-1) K(-1), a ZT of 1.0 has been obtained for Ba0.925Na0.075Cu2Se2 at 773 K, which is the highest value reported in this family to date. However, BaCu2Se2 volatilizes at 473 K, so a protective coating is necessary for its application. Besides, we studied the thermal expansion coefficient of BaCu2Se2 in this paper.
Thermoelectric performance of materials with Cu$Ch_4$ ($Ch=$ S, Se) tetrahedra: Similarities and differences among their low-dimensional electronic structure from first principles

Masayuki Ochi,Hitoshi Mori,Daichi Kato,Hidetomo Usui,Kazuhiko Kuroki

DOI: https://doi.org/10.1103/PhysRevMaterials.2.085401

2018-08-03

Abstract:In this study, we perform a comparative theoretical study on the thermoelectric performance of materials with Cu$Ch_4$ ($Ch=$ S, Se) tetrahedra, including famous thermoelectric materials BiCuSeO and tetrahedrite Cu$_{12}$Sb$_4$S$_{13}$, by means of first-principles calculations. By comparing these electronic band structures, we find that many of these materials possess a Cu-$t_{2g}$ band structure consisting of quasi-one-dimensional band dispersions and the isotropic (two-dimensional for layered compounds) band dispersion near the valence-band edge. Therefore, the key factors for the thermoelectric performance are the anisotropy of the former band dispersion and the degeneracy of these two kinds of band dispersions. We also find that a large extension of the chalcogen orbitals often improves their thermoelectric performance by improving these two factors or by going beyond such a basic band structure through a large alternation of its shape. Such a large extension of the chalcogen orbitals might partially originate from the anisotropic Cu-$Ch$ bond geometry of a tetrahedron. Our study reveals interesting similarities and differences of materials with Cu$Ch_4$, which provides important knowledge for a future search of high-performance thermoelectric materials.

Materials Science
Systematically Investigate Mechanical and Electrical Properties of Bi2O2Se by Te Atom Substitution and Compare It with Homologue Bi2O2Te from First-Principles Calculations

Zeqiang Zhang,Jieshi Chen,Weijie Zhang,Zhishui Yu,Chun Yu,Hao Lu

DOI: https://doi.org/10.1016/j.mtcomm.2020.101182

IF: 3.8

2020-01-01

Materials Today Communications

Abstract:In this paper, first-principles calculations based on density functional theory (DFT) were used to study the optimization of the mechanical and electrical properties of Bi2O2Se by equivalent Te atom substitution (Bi2O2Se1-XTeX (X = 0, 0.25, 0.50, 0.75, 1)). The structures of Te atom after equivalent substitution satisfy the mechanical stability, and can improve its plastic toughness. The minimum thermal conductivity (k(min)) of Bi2O2Se1-XTeX (X = 0, 0.25, 0.50, 0.75, 1) determined by elastic constants are 0.398 (W/m k), 0.362 (W/m k), 0.332 (W/m k), 0.376 (W/m k), 0.36 (W/m k) and Debye-temperature (T-D) are 287.0 K, 263.4 K, 245.9 K, 274.6 K, 266.7 K, respectively. The values indicate that the substitution of Te atoms can inhibit the heat transfer and reduce the atomic bonding force to improve the toughness. And the effect is best when the concentration of Te atom substitution reaches 0.5. The calculated energy band gaps (E-g) of Bi2O2Se1-XTeX (X = 0, 0.25, 0.50, 0.75, 1) are 0.85 eV, 0.52 eV, 0.18 eV, 0.11 eV and 0.23 eV, respectively. The E-g of Bi2O2Se and Bi2O2Te are consistent with the experimental results. Electronic structure analysis shows that Te atom substitution makes s-orbital and p-orbit hybridization stronger and Fermi level (E-F) right shift, and then narrows the band gap. It is more directly reflected in the charge density difference and electron localization function (ELF) maps. The results show that the substitution of Te atom for Se atom in the Bi2O2Se can improve the mechanical and electrical properties, and then improve the actual conversion efficiency of thermoelectricity.
Improved thermoelectric performance of α- and β- Cu 2 Se through suppression of hole density using extrinsic copper vacancies

Zhixiong Yin,Ruiming Lu,Trevor P. Bailey,Tao Ma,Ctirad Uher,Pierre F.P. Poudeu

DOI: https://doi.org/10.1016/j.cej.2024.157558

IF: 15.1

2024-11-11

Chemical Engineering Journal

Abstract:Modulating Cu + ion disorder in Cu 2 Se can enable control over the polymorphism and the carrier density leading to enhanced thermoelectric properties for both α- and β-Cu 2 Se. Here we report that the incorporation of Cr 3+ into the Cu 2 Se crystal lattice facilitates the stabilization of α-Cu 2 Se at 300 K leading to a large (∼140%) reduction in the carrier density both below and above the phase transition. This is attributed to the reduction in the density of intrinsic copper interstitials ( Cui∙ ) within the Cu (2-δ-λ) ( CrCu.. ) λ ( VCu′ ) δ ( Cuix ) δ -2λ ( h∙ ) δ-2λ Se crystal lattice. Such optimization of the carrier density led to a large (63%) increase in the thermopower and a drastic (46%) reduction in the total thermal conductivity for both α- and β-Cu 2 Se matrices. Consequently, a significant enhancement of the thermoelectric performance is observed in the entire temperature range from 300 K to 773 K. This results in high average ZT values for both α-Cu 2 Se ( ZT ave = 0.60) and β-Cu 2 Se ( ZT ave = 0.97), which paves the way for both near room temperature and high temperatures applications. This work provides a new approach to optimize the thermoelectric performance of Cu 2 Se-based materials by leveraging the interaction between mobile intrinsic Cui. and extrinsic VCu′ to suppress the hole density.

engineering, chemical, environmental
Enhanced Stability and Thermoelectric Performance in Cu 1.85 Se-Based Compounds

Jing Jiang,Chengcheng Yang,Yi Niu,Jie Song,Chao Wang

DOI: https://doi.org/10.1021/acsami.1c08886

2021-07-30

Abstract:Liquid-like copper selenium compounds have attracted considerable interest in recent years for their excellent thermoelectric performance, abundant element reserves, and low toxicity. However, the related applications are still limited due to the phase transition and precipitation of Cu under an external field. Here, the cubic Cu1.85Se-based compounds with suppressed phase transition and improved critical voltage (Vc) are first studied. In particular, Li/Bi co-doping effectively optimizes hole concentration and the ZTs are substantially improved from 0.2 in Cu1.85Se to 0.7 in Li0.03Cu1.81Bi0.04Se at 760 K. Meanwhile, the latter shows an outstanding Vc above 0.22 V at 750 K, which is the highest value in Cu2–xSe thermoelectric compounds to date. Moreover, S is alloyed in Li0.03Cu1.81Bi0.04Se to greatly reduce the thermal conductivity and the ZT is further enhanced to 0.9 for Li0.03Cu1.81Bi0.04Se0.9S0.1 at 760 K. Our work sheds light on a new strategy to realize good stability and enhanced thermoelectric performance, which provides a new direction for further research.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c08886.Temperature dependence of the thermoelectric properties of Cu1.8+xSe (x = 0, 0.03, 0.05, 0.06); XRD patterns of Cu1.8+xSe (x = 0, 0.03, 0.05, 0.06); XRD pattern of Li0.04Cu1.81Bi0.04Se and thermoelectric properties of LixCu1.85Se (x = 0, 0.01, 0.02, 0.03, 0.04); XPS spectra of Li0.03Cu1.81Bi0.04Se; high-temperature XRD patterns of Cu1.85Se and Li0.03Cu1.85Se; TGA analysis of Cu1.85Se and Li0.03Cu1.85Se; temperature dependence of Cu1.85–xSnxSe (x = 0, 0.01, 0.02, 0.03); temperature-dependent thermoelectric properties of Cu1.85–xBixSe (x = 0, 0.01, 0.02, 0.03, 0.04); temperature dependence of electrical thermal conductivity of LixCu1.85–xSe (x = 0, 0.01, 0.02, 0.03) and Li0.03Cu1.85–yBiySe (y = 0.02, 0.03, 0.04, 0.05); detailed calculation process of lattice thermal conductivity; high stability and reproducibility of the thermoelectric properties of Li0.03Cu1.81Bi0.04Se; temperature dependence of the thermoelectric properties of Li0.03Cu1.81Bi0.04Se1–zSz (z = 0, 0.05, 0.1, 0.2, 0.3); and temperature dependence of the electrical thermal conductivity for Cu1.85Se, Li0.03Cu1.85Se and Li0.03Cu1.81Bi0.04Se1–zSz (z = 0, 0.05, 0.1, 0.2, 0.3) (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics

Yan Gu,Xiao‐Lei Shi,Lin Pan,Wei‐Di Liu,Qiang Sun,Xiao Tang,Liang‐Zhi Kou,Qing‐Feng Liu,Yi‐Feng Wang,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adfm.202101289

IF: 19

2021-04-10

Advanced Functional Materials

Abstract:In this work, a record high thermoelectric figure-of-merit ZT of 1.6 ± 0.2 at 873 K in p-type polycrystalline Bi0.94Pb0.06CuSe1.01O0.99 by a synergy of rational band manipulation and novel nanostructural design is reported. First-principles density functional theory calculation results indicate that the density of state at the Fermi level that crosses the valence band can be significantly reduced and the measured optical bandgap can be enlarged from 0.70 to 0.74 eV by simply replacing 1% O with 1% Se, both indicating a potentially reduced carrier concentration and in turn, an improved carrier mobility and a boosted power factor up to 9.0 µW cm−1 K−2. Meanwhile, comprehensive characterizations reveal that under Se-rich condition, Cu2Se secondary microphases and significant lattice distortions triggered by Pb-doping and Se-substitution can be simultaneously achieved, contributing to a reduced lattice thermal conductivity of 0.4 W m−1 K−1. Furthermore, a unique shear exfoliation technique enables an effective grain refinement with higher anisotropy of the polycrystalline pellet, leading to a further improved power factor up to 10.9 µW cm−1 K−2 and a further reduced lattice thermal conductivity of 0.30 W m−1 K−1, which gives rise to record high ZT.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Anomalous Transport and Thermoelectric Performances of CuAgSe Compounds

A. J. Hong,T. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. -M. Liu,Z. F. Ren

DOI: https://doi.org/10.1016/j.ssi.2014.03.025

IF: 3.699

2014-01-01

Solid State Ionics

Abstract:Copper silver selenide has two phases: low-temperature semimetal phase (α-CuAgSe) and high-temperature phonon-glass superionic phase (β-CuAgSe). In this work, the electric transport and thermoelectric properties of the two phases are investigated. It is revealed that β-CuAgSe is a p-type semiconductor and exhibits low thermal conductivity while α-CuAgSe shows metallic conduction with dominant n-type carriers and low electrical resistivity. The thermoelectric figure of merit zT of the polycrystalline β-CuAgSe at 623K is ~0.95, suggesting that superionic CuAgSe can be a promising thermoelectric candidate in the intermediate temperature range.
First principle analysis of structural, electronic, optical, and thermoelectric characteristics of Ba3CaTa2O9 complex perovskite

Saadi Berri

DOI: https://doi.org/10.1007/s42247-021-00331-1

2022-01-03

Emergent Materials

Abstract:AbstractMaterial properties of complex perovskite Ba3CaTa2O9 have been studied. The computations are performed using the ultra-soft pseudo-potentials. The calculated structural parameters are accordant with those of experiment. The author finding regarding the electronic and optical properties reveals that the candidates of interest can be promising materials in optoelectronic devices for visible and ultraviolet domains. The seebeck coefficient (S), electrical conductivity (σ), thermal conductivity (κ), and the figure of merit (ZT) for Ba3CaTa2O9 are calculated. The Ba3CaTa2O9 posses high figure of merit (ZT) value, suggesting their applications in thermoelectric power generation.
Achieving High Power Factor And Thermoelectric Performance Through Dual Substitution Of Zn And Se In Tetrahedrites Cu12sb4s13

Chen Zhu,Hongwei Ming,Lulu Huang,Baoli Zhang,Xunuo Lou,Di Li,Bushra Jabar,Hongxing Xin,Jian Zhang,Xiaoying Qin

DOI: https://doi.org/10.1063/1.5119402

IF: 4

2019-01-01

Applied Physics Letters

Abstract:As an environmentally friendly thermoelectric material with its constituents being free of Pb/Te, tetrahedrite Cu12Sb4S13 absorbs much research interest. However, its low thermoelectric performance inhibits its applications. Here, we show that through dual substitution of Se for S and Zn for Cu in the compound, both the electrical conductivity and the thermopower are enhanced, leading to the elevation of the power factor as high as similar to 33% (at 723 K). Analyses indicate that the substitution of Se for S gives rise to changes in stoichiometry of Cu12Sb4S13 through precipitation of impurity phase Cu3SbS4, which causes variations of S vacancies and hole concentrations, while Zn2+ substitution for Cu1+ introduces donors, both of which tune and optimize the carrier concentration. Besides, the lattice thermal conductivity of dual substituted samples is reduced by as low as similar to 30% (at 723 K) due to intensified phonon scattering of the impurities (Se and Zn). As a result, a large figure of merit ZT = 0.9 (at 723 K) is achieved in Cu12-yZnySb4S12.8Se0.2 samples with y = 0.025 and 0.05, which is similar to 41% higher than that of pristine tetrahedrite Cu12Sb4S13, indicating that dual substitution is an effective approach to improving its thermoelectric performance.
Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Guang-Kun Ren,Shanyu Wang,Zhifang Zhou,Xin Li,Jiong Yang,Wenqing Zhang,Yuan-Hua Lin,Jihui Yang,Ce-Wen Nan

DOI: https://doi.org/10.1038/s41467-019-10476-7

IF: 16.6

2019-01-01

Nature Communications

Abstract:BiCuSeO oxyselenides are promising thermoelectric materials, yet further thermoelectric figure of merit ZT improvement is largely limited by the inferior electrical transport properties. The established literature on these materials shows only one power factor maximum upon carrier concentration optimization, which is typical for most thermoelectric semiconductors. Surprisingly, we found three power factor maxima when doping Bi with Pb. Based on our first-principles calculations, numerical modeling, and experimental investigation, we attribute the three maxima to the Fermi energy optimization, band convergence, and compositing effect due to in situ formed PbSe precipitates. Consequently, three ZT peaks of 0.9, 1.1, and 1.3 at 873 K are achieved for 4, 10, and 14 at.% Pb-doped samples, respectively, revealing the significance of complex electronic structure and multiple roles of Pb in BiCuSeO. The results establish an accurate band structure characterization for BiCuSeO and identify the role of band convergence and nanoprecipitation as the driving mechanism for high ZT.
Extremely Low Lattice Thermal Conductivity Leading to Superior Thermoelectric Performance in Cu 4 TiSe 4

Tingting Zhang,Tian Yu,Suiting Ning,Ziye Zhang,Ning Qi,Man Jiang,Zhiquan Chen

DOI: https://doi.org/10.1021/acsami.3c05602

IF: 9.5

2023-06-28

ACS Applied Materials & Interfaces

Abstract:Low thermal conductivity is crucial for obtaining a promising thermoelectric (TE) performance in semiconductors. In this work, the TE properties of Cu(4)TiS(4) and Cu(4)TiSe(4) were theoretically investigated by carrying out first-principles calculations and solving Boltzmann transport equations. The calculated results reveal a lower sound velocity in Cu(4)TiSe(4) compared to that in Cu(4)TiS(4), which is due to the weaker chemical bonds in the crystal orbital Hamilton population (COHP) and also...

materials science, multidisciplinary,nanoscience & nanotechnology
Achieving high power factor and thermoelectric performance through dual substitution of Zn and Se in tetrahedrites Cu12Sb4S13

Chen Zhu,Hongwei Ming,Lulu Huang,Baoli Zhang,Xunuo Lou,Di Li,Bushra Jabar,Hongxing Xin,Jian Zhang,Xiaoying Qin

DOI: https://doi.org/10.1063/1.5119402

IF: 4

2019-01-01

Applied Physics Letters

Abstract:As an environmentally friendly thermoelectric material with its constituents being free of Pb/Te, tetrahedrite Cu12Sb4S13 absorbs much research interest. However, its low thermoelectric performance inhibits its applications. Here, we show that through dual substitution of Se for S and Zn for Cu in the compound, both the electrical conductivity and the thermopower are enhanced, leading to the elevation of the power factor as high as ∼33% (at 723 K). Analyses indicate that the substitution of Se for S gives rise to changes in stoichiometry of Cu12Sb4S13 through precipitation of impurity phase Cu3SbS4, which causes variations of S vacancies and hole concentrations, while Zn2+ substitution for Cu1+ introduces donors, both of which tune and optimize the carrier concentration. Besides, the lattice thermal conductivity of dual substituted samples is reduced by as low as ∼30% (at 723 K) due to intensified phonon scattering of the impurities (Se and Zn). As a result, a large figure of merit ZT = 0.9 (at 723 K) is achieved in Cu12−yZnySb4S12.8Se0.2 samples with y = 0.025 and 0.05, which is ∼41% higher than that of pristine tetrahedrite Cu12Sb4S13, indicating that dual substitution is an effective approach to improving its thermoelectric performance.
Entropy-driven structural transition from tetragonal to cubic phase: High thermoelectric performance of CuCdInSe 3 compound

Tingting Luo,Yihao Hu,Shi Liu,Fanjie Xia,Junhao Qiu,Haoyang Peng,Keke Liu,Quansheng Guo,XingZhong Li,Dongwang Yang,Xianli Su,Jinsong Wu,Xinfeng Tang

DOI: https://doi.org/10.1016/j.mtphys.2023.101211

IF: 11.021

2023-08-24

Materials Today Physics

Abstract:Cu based chalcopyrite is an important class of thermoelectric materials with excellent electronic properties, however, the thermal conductivity is relatively high due to the simple tetragonal structure with highly ordered configuration on cation sites, limiting the thermoelectric performance . Herein, we realize that the modulation of entropy via alloying CdSe achieves the structural transition from tetragonal structure with ordered configuration on cations sites in CuInSe2 compound to cubic CuCdInSe3. CuCdInSe 3 crystallizes in a zinc blende (ZnS) structure where Cu, Cd and In cations randomly occupy the Zn site with the occupancy fraction 1/3. This entropy driven order-disorder transition on the cation site, in conjunction with the intensified point defect phonon scattering via alloying CdSe in CuInSe 2 , dramatically suppress the thermal conductivity. An ultra-low thermal conductivity of 0.76 Wm −1 K −1 at 780 K is achieved for CuCdInSe 3 compound, which is only about 2/3 in comparison with that of CuInSe 2 . CuCdInSe 3 is an indirect semiconductor, with the minimum of conduction band (CBM) located at Γ point and the maximum of valence band (VBM) between Γ and A. The density of states in VBM of CuCdInSe 3 are mainly contributed by the hybridization between Se-4p and Cu-3d orbitals, while that of CBM is dominant by Se-4p and In-5s orbitals. Minute adjustment of Cd content in CuCd (1+x) InSe 3 effectively modulates the carrier concentration and an optimized power factor of 0.58 Wm −1 K −2 is attained at 578 K for CuCd 1.01 InSe 3 , which is 9.6 times as high as the pristine CuCdInSe 3 . The improved electronic properties integrated with the intrinsically low thermal conductivity result in an enhanced thermoelectric figure-of-merit ZT value of 0.45 at 780 K for CuCd 1.005 InSe 3 , which is seven times higher than that of the pristine CuCdInSe 3 .

materials science, multidisciplinary,physics, applied
Compositing effects for high thermoelectric performance of Cu2Se-based materials

Zhifang Zhou,Yi Huang,Bin Wei,Yueyang Yang,Dehong Yu,Yunpeng Zheng,Dongsheng He,Wenyu Zhang,Mingchu Zou,Jin-Le Lan,Jiaqing He,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1038/s41467-023-38054-y

IF: 16.6

2023-04-27

Nature Communications

Abstract:Abstract Thermoelectric materials can realize direct conversion between heat and electricity, showing excellent potential for waste heat recovery. Cu 2 Se is a typical superionic conductor thermoelectric material having extraordinary ZT values, but its superionic feature causes poor service stability and low mobility. Here, we reported a fast preparation method of self-propagating high-temperature synthesis to realize in situ compositing of BiCuSeO and Cu 2 Se to optimize the service stability. Additionally, using the interface design by introducing graphene in these composites, the carrier mobility could be obviously enhanced, and the strong phonon scatterings could lead to lower lattice thermal conductivity. Ultimately, the Cu 2 Se-BiCuSeO-graphene composites presented excellent thermoelectric properties with a ZT max value of ~2.82 at 1000 K and a ZT ave value of ~1.73 from 473 K to 1000 K. This work provides a facile and effective strategy to largely improve the performance of Cu 2 Se-based thermoelectric materials, which could be further adopted in other thermoelectric systems.

multidisciplinary sciences

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