Abstract:Sapphire single crystal has great potential applications in the semiconductor field. Due to its brittle characteristics. Crack failure on ultra-thin sapphire surface were prone to happen using tradition paraffin bonding clamping method during double-side processing, which severely restricted its processing efficiency. Thus, for overcoming the problem, the layer stacked clamping (LSC) method was proposed by using van der Waals forces and capillary forces that caused by dropping a liquid between workpiece and baseplate. A series of experiments were conducted for studying the characteristic of layer stacked clamping (LSC) method on polishing ultrathin sapphire wafer with double-side polishing machine. A self-made friction force test platform was built for learning the friction force between sapphire wafer and baseplate with different baseplate (stainless steel, cast iron, and aluminum alloy) and different baseplate surface roughness (Ra 3.6 nm, 68.2 nm, 210.1 nm, and 517.9 nm). Single-factor polishing experiments were carried out on baseplate with different flatness (PV value 5.3 μm, 9.8 μm, 19.9 μm, and 29.7 μm) and different thicknesses (0.082 mm, 0.104 mm, and 0.119 mm). The double-side polishing experiments were carried out to compare the polishing performance on the ultrathin sapphire polishing between LSC method and traditional paraffin bonding method. The results show that the friction forces of stainless steel and iron increase under the adsorption of droplets. Stainless steel performs higher friction force and is more suitable for making the baseplate. The inner fringe of limiter was cut off by the edge of the sapphire wafer, and a slope was thereby formed. According to polishing results, the LSC method has a higher efficiency on the clamping wafers than traditional paraffin bonding method. The surface roughness, flatness, and material removal rates are better than paraffin bonding. Finally, a smooth surface with a surface roughness (Sa) of 1.1 nm and flatness (PV) of 0.988 μm was obtained by the LSC method, significantly improving the clamping and processing efficiency of ultra-thin sapphire.

Process Optimization of Lapping Sapphire Substrate with Fixed Diamond Abrasive Pad

Orthogonal experimental study on the influence of machining parameters on flat lapping of sapphire substrate

Lapping of sapphire using developed clusters of diamond and ceria chemically active abrasives

In-situ reconditioning mechanism for fixed abrasive pads based on the wear behavior of loose grains

An Experimental Investigation of Sapphire Grinding by Porous and Vitrified M0.5/1.5 Diamond Grinding Wheel

A study on mechanism of sapphire polishing using the diamond abrasive by molecular dynamics

Study on Process Optimization of Ultrasound Assisted Magneto-Rheological Polishing of Sapphire Hemisphere Surface Based on Fe3O4/SiO2 Core-Shell Abrasives

Tribological effects of loose alumina abrasive assisted sapphire lapping by a fixed agglomerated diamond abrasive pad (FADAP)

A Novel Lapping Process for Single-Crystal Sapphire Using Hybrid Nanoparticle Suspensions

Experimental Study of Ultrasonic Vibration Assisted Chemical Mechanical Polishing for Sapphire Substrate

Performance assessment of ultrathin sapphire wafer polishing with layer stacked clamping (LSC) method

Lapping performance of mixed-size agglomerated diamond abrasives in fixed abrasives pads

Modeling of Material Removal Rate for the Fixed-Abrasive Double-Sided Planetary Grinding of a Sapphire Substrate

Analysis of Fixed Abrasive Pads with a Nano-Sized Diamond for Silicon Wafer Polishing

Cluster magnetorheological global dynamic pressure planarization processing of single crystal sapphire

Chemical mechanical polishing for sapphire wafers using a developed slurry

Longitudinal-torsional compound ultrasonic vibration end grinding sapphire: A study on surface topography and roughness

Research on the Fixed-Abrasive Lapping Process of Polycrystalline Aluminum Nitride

Effect of different grinding strategies on subsequent polishing processes of sapphire

Research on Subsurface Damage of Lapping Sapphire with Diamond Fixed Abrasive

Optimisation of Lapping Process Parameters for Single-Crystal 4H-SiC Using Orthogonal Experiments and Grey Relational Analysis