Abstract:Sapphire single crystal has great potential applications in the semiconductor field. Due to its brittle characteristics. Crack failure on ultra-thin sapphire surface were prone to happen using tradition paraffin bonding clamping method during double-side processing, which severely restricted its processing efficiency. Thus, for overcoming the problem, the layer stacked clamping (LSC) method was proposed by using van der Waals forces and capillary forces that caused by dropping a liquid between workpiece and baseplate. A series of experiments were conducted for studying the characteristic of layer stacked clamping (LSC) method on polishing ultrathin sapphire wafer with double-side polishing machine. A self-made friction force test platform was built for learning the friction force between sapphire wafer and baseplate with different baseplate (stainless steel, cast iron, and aluminum alloy) and different baseplate surface roughness (Ra 3.6 nm, 68.2 nm, 210.1 nm, and 517.9 nm). Single-factor polishing experiments were carried out on baseplate with different flatness (PV value 5.3 μm, 9.8 μm, 19.9 μm, and 29.7 μm) and different thicknesses (0.082 mm, 0.104 mm, and 0.119 mm). The double-side polishing experiments were carried out to compare the polishing performance on the ultrathin sapphire polishing between LSC method and traditional paraffin bonding method. The results show that the friction forces of stainless steel and iron increase under the adsorption of droplets. Stainless steel performs higher friction force and is more suitable for making the baseplate. The inner fringe of limiter was cut off by the edge of the sapphire wafer, and a slope was thereby formed. According to polishing results, the LSC method has a higher efficiency on the clamping wafers than traditional paraffin bonding method. The surface roughness, flatness, and material removal rates are better than paraffin bonding. Finally, a smooth surface with a surface roughness (Sa) of 1.1 nm and flatness (PV) of 0.988 μm was obtained by the LSC method, significantly improving the clamping and processing efficiency of ultra-thin sapphire.

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