Single-electron Transistor and Its Fabrication Based on SPM

郑丽芬,刘庆纲,胡小唐
DOI: https://doi.org/10.3969/j.issn.1671-4776.2002.07.002
2002-01-01
Abstract:In the field of electronics,high integration is the goal that human is pursuing.Nano-electronic devices cater for the requirement ,which gradually become the key units of chips in place of micro-electronic devices.Single-electron devices get more and more attention due to their high efficiency,good performance,high speed,low wastage(working in room temperature),high integration,reliability and so on.Nano-electronic devices own nanometer scale,so many re-searchers devote themselves to seeking for an excellent nanofabrication approach.Field-induced ox-idation process of SPM has attracted extensive interest of people because of its simplicity and low cost.In this paper,the structure and running principle of SET are introduced.Particularly,the fabrication principle based on SPM field-induced oxidation in air is presented.
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