Abstract:Normally, nitrogen-polar (N-polar) GaN films with better crystalline quality tend to have poor surface morphology, whereas those with good surface morphology suffer from degraded crystalline quality. In this work, we use a two-step high-temperature (HT) growth method to grow N-polar GaN films on vicinal c-plane sapphire substrates by metalorganic chemical vapor deposition, which can effectively solve the irreconcilability between surface morphology and crystalline quality. The GaN film consists of two GaN layers (HT-GaN 1 and HT-GaN 2), which were grown at different growth parameters, respectively. The 300-nm-thick HT-GaN 1 layer was directly grown on the low-temperature GaN buffer layer under the higher V/III ratio and pressure at 1040 degrees C to reduce dislocation density. The 1.7-mu m-thick HT-GaN 2 layer was grown under the lower V/III ratio and pressure to improve surface morphology. Besides, the growth temperature of HT-GaN 2 layer was ramped up to 1070 degrees C to suppress the yellow-band luminescence. Finally, high-quality N-polar GaN films with smooth surface morphology and high crystalline quality were obtained, for which the full-width at half-maximum values of (0002) and (1012) planes X-ray diffraction rocking curves are 131 and 390 arcsec, respectively, the root mean square roughness over an area of 20 x 20 mu m2 is 1.88 nm, and the residual compressive stress is as low as 0.025 GPa. It is reasonably believed that this work provides an effective approach to preparing high-quality N-polar GaN films for the application of N-polar nitride devices.

Growth of High Quality N-polar N-Gan on Vicinal C-face N-Sic Substrates for Vertical Conducting Devices

Growth of High-Quality Nitrogen-Polar GaN Film by Two-Step High-Temperature Method

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar ( 11 2 ̄ 2 ) AlGaN films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Recent Progress in Metal-Organic Chemical Vapor Deposition of (000(1)Over-Bar) N-Polar Group-Iii Nitrides

Growth of N-Polar Gan on Vicinal Sapphire Substrate by Metal Organic Chemical Vapor Deposition

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

GaN growth on Si and Si-SiO2-Si compliant substrates

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization