Abstract:An advanced evaluation system for experimental high power silicon (Si) and silicon carbide (SiC) Super Gate Turn Off Thyristors (SGTOs) with custom data acquisition and characterization electronics was designed and built in a cooperative agreement between engineers at Texas Tech University's (TTU) Center for Pulsed Power and Power Electronics (P3E) laboratory and research scientists at the U.S. Army Research Lab (ARL). The system consists of a 4.4 kJ Pulse Forming Network (PFN) energized by a 10 kW rapid capacitor charger developed at TTU, a data acquisition system which records chosen waveforms for each test cycle and a curve tracing module which the test devices are mechanically switched into to record current and voltage characteristics at arbitrary intervals between high power cycles. Testing is completely automated, with all test parameters including charge level, repetition rate, volume, etc. set within a custom windows based GUI. The evaluation system has successfully recorded changing I-V characteristics before actual physical failure in several devices. Extremely high volume testing has also been carried out with one device having been cycled over 30,000 times at moderate (2.5 kA) conduction levels. This paper expands on work presented at the 2012 Power Modulator Conference and presents newly acquired data and modifications.

Experimental Investigation of Power Loss Characteristics of Large Capacity GTOs

Investigation on the analysis software for switching characteristics of large capacity GTO

Investigation on the Performance of Thyristors for Pulsed Power Applications

Analysis of a New 15-kV SiC n-GTO under Pulsed Power Applications

Capacitor Switched Gate-Turnoff Thyristor

Design of Snubber Circuit for the 4500 V/4000 A GTOs in a 20 MVA STATCOM

Design Of Snubber Circuit For The 4500v/4000a Gtos In A 20mva Statcom

Snubber circuit for 4.5 kV/4 kA GTO in a ±20 Mvar STATCOM

Snubber Circuit for 4.5kv/4ka GTOs in a ±20mvar STATCOM

A Novel Approach for Realizing Hard-Driven Gate-Turn-off Thyristor

Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units

DEVELOPMENT OF ±20 Mvar STATCOM EMPLOYING GTO INVERTERS

Design of an advanced modular automated evaluation system for experimental high power Si and SiC SGTOs

Experimental comparison of SiC GTO and ETO for pulse power applications

Performance of a 4.5 Kv, 100A Current-Scalable Emitter Turn-off (ETO) Thyristor Module

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

Experimental Evaluation of IGCT Converters with Reduced Di/dt Limiting Inductance

Comparison of the State-of-the-art High Power IGBTs, GCTs and ETOs

IGCT AND IEGT--NEW HIGH POWER SILICON SWITCHES SUITABLE FOR STATCOM

Characteristics of GTOs and high voltage MCTs in high power soft-switching converters

MTO/sup TM/ Thyristor: an Efficient Replacement for the Standard GTO