Characteristics of GTOs and high voltage MCTs in high power soft-switching converters

V. Temple,S. Arthur,R. D. De Doncker,O. Demirci

DOI: https://doi.org/10.1109/TIA.1994.350309

1991-09-28

Abstract:The authors present and summarize key HVMCT (high-voltage MOS-controlled thyristor) characterization results gathered to date as they relate to HV MCT dynamic performance during zero voltage switching. HV MCTs have been developed and tested in a zero-voltage soft-switching test circuit. The devices have static breakdown voltages of 3000 V and turn-off losses that are comparable to those of fast GTOs rate for 2500 V peak. However, the onstate losses of the HV MCTs are slightly higher assuming 8 dies can be paralleled to match the current handling capability of the GTO.<<ETX>>

Physics,Engineering