Enhancing Turn-off Performance in IGCT-Based High Power Applications—Part Ⅱ: Hybrid Switch with IGBT Integration and Experimental Validation
Lvyang Chen,Jiabin Wang,Xiangyu Zhang,Lin Wang,Zhengyu Chen,Biao Zhao,Jinpeng Wu,ZhanQing Yu,Lei Qi
DOI: https://doi.org/10.1109/tpel.2024.3481967
IF: 5.967
2024-01-01
IEEE Transactions on Power Electronics
Abstract:Integrated gate-commutated thyristor (IGCT) is a promising device in high-power applications thanks to its low on-state voltage, large surge capacity and considerably low cost ratio. However, IGCT's current-controlled nature restricts its turn-off capability, which in turn limits the fault current handling ability in high-voltage direct current (HVDC) power systems. It has been identified that IGCT has the potential of over-current interruption under ultra-low turn-off voltage in the companion paper. Thereby, this paper proposes to utilize the insulated-gate bipolar transistor (IGBT) in parallel to form an IGCT-IGBT hybrid switch, which facilitates the IGCT with quasi-zero voltage switching condition as well as current turn-off assistance. To testify the effectiveness, the prototype platform of the hybrid switch is developed with a 4-inch 4.5 kV/2.67 kA IGCT and the 4.5 kV/1.2 kA IGBT modules, and a series of current switching tests up to 20 kA are carried out, which reaches 5 times of IGCT's official turn-off capability. This study provides generalized insight and extensive experimental validation for the hybrid switch, highlighting its possibility for reliability and efficiency improvement in high power applications.