Design,simulation and Analysis of IGCT-based High Power NPC Inverter

袁立强,赵争鸣,刘建政,李崇坚,李耀华
DOI: https://doi.org/10.3969/j.issn.1006-6047.2004.01.012
2004-01-01
Abstract:The upgrade of the IGCTs,the improved designs and the wide application of three-level topologies have led to the rapid development of high power inverters.The design,simulation and analysis of a5MV·A NPC(Neutral Point Clamped)inverter equipped with IGCT(Integrated Gate Commutated Thyristors)is presented.Reliability,cost and switching behavior are the main target specifications in the inverter applications.The presented inverter with a DC-link of5kV is equipped with the IGCTs rating4.5kV/4.0kA without switch-off snubber.The simulation for this inverter is implemented in PSIM package,into which the functional model of IGCTs and SVPWM(Space Vector PMW)control module are incorporated.The simulation results include not only the steady-state waveforms of the inverter but also the switching mode of the IGCTs.Based on the simulation,the commutating process,especially the influence of stray inductance in one phase leg,is analyzed.The optimized scheme and design rules are given for the IGCT-based NPC inverter.
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