Influence of Ion-beam Etching Incidence Angle on Slope of Pattern Sidewall

胡新宁,刘刚,田扬超
2003-01-01
Abstract:The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence angle on slope of pattern sidewall are studied. Quartz substrates are etched with ion-beam energy of 450 eV and beam density of 80 mA/cm~2 at incidence angle of 0°,15°,30°,45°and 60°,respectively. The pattern sidewalls structure by ion-beam etching at different incidence angles are obtained. The high quality of pattern etched at incidence of 30°is obtained. The results show that the slope of pattern sidewall can be increased and the quality of etched pattern is improved by etching at an appropriate incidence angle. So it is very important to choose appropriate angle for ion-beam etching in order to control quadratic effect and keep the quality of pattern profile.
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