Study on the Effects of Ion Beam Etching on Polished Surface of CLBO Crystal

Xin YUAN,De-zhong SHEN,Xiao-qing WANG,Guang-qiu SHEN

DOI: https://doi.org/10.3969/j.issn.1000-985X.2005.01.023

2005-01-01

Abstract:Ion beam etching (IBE) was applied to treat the as-polished surfaces of a CLBO crystal with varying in rotation speed of clamp, etching times and incidence angles. Atomic force microscopy (AFM) was used to evaluate the effect of IBE on the morphology and roughness of the crystal surface. The results indicate that it is not the longer etching time,the better the crystal surface is; higher rotation speed of the clamp makes the crystal surface rougher;etching effects are better than that under 0°etching angle when the etching angles vary from 30° to 60°,and IBE is more efficient to R_z than to R_a of the CLBO crystal.