Properties of PZT Thin Films Prepared by MOD Method for Ferroelectric Memories

林殷茵,汤庭鳌,黄维宁,宋浩然
DOI: https://doi.org/10.3969/j.issn.1000-3819.2001.02.019
2001-01-01
Abstract:The MOD method was employed to prepare PZT thin film with pure perovskite phase and good ferroelectric properties. The typical values of Pr、Ps、Ec were 27 μC/cm 2、44 μC/cm 2、10.9 kV/mm respectively. The further analysis indicated that sufficient crystallization and large grain size were benefical to obtain large P r values.
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