Abstract:Abstract Silicon wet bulk micromachining is the most widely used technique for the fabrication of diverse microstructures such as cantilevers, cavities, etc. in laboratory as well as in industry for micro-electromechanical system (MEMS) application. Although, increasing the throughput remains inevitable, and can be done by increasing the etching rate. Furthermore, freestanding structure release time can be reduced by the improved undercutting rate at convex corners. In this work, we have investigated the etching characteristics of a non-conventional etchant in the form of hydroxylamine (NH 2 OH) added sodium hydroxide (NaOH) solution. This research is focused on Si{100} wafer as this orientation is largely used in the fabrication of planer devices (e.g., complementary metal-oxide semiconductors) and microelectromechanical systems (e.g., inertial sensors). We have performed a systematic and parametric analysis without and with 12% NH 2 OH in 10 M NaOH for improved etching characteristics such as etch rate, undercutting at convex corners, and etched surface morphology. 3D scanning laser microscope is used to measure average surface roughness ( R a ), etch depth (d), and undercutting length ( l ). Morphology of the etched Si{100} surface is examined using optical and scanning electron microscopes. The addition of NH 2 OH in NaOH solution remarkably exhibited a two-fold increment in the etching rate of a Si{100} surface. Furthermore, the addition of NH 2 OH significantly improves the etched surface morphology and undercutting at convex corners. Undercutting at convex corners is highly prudent for the quick release of microstructures from the substrate. In addition, we have studied the effect of etchant age on etching characteristics. Results presented in this article are of large significance for engineering applications in both academic and industrial laboratories.

Research on Micro Structures of Si Surfaces after Wet Chemical Etching

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Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Progress and Mechanism of Cu Assisted Chemical Etching of Silicon in A Low Cu2+ Concentration Region

Influence of Surfactant on Aperture of Photo-Electro-chemical Etching for Silicon Microchannel Plate

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Research on Silicon Wafer Surface Phase under the Ultra-thin Slicing Process and Its Etching Hindrance Behavior during Metal-Assisted Chemical Etching

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

Study of anisotropic etching of (1 0 0) Si with ultrasonic agitation

Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon

Experimental Study on Roughness and Flatness of Micromirror Fabricated by Different Anisotropic Silicon Etching Processes

Enhanced etching characteristics of Si{100} in NaOH-based two-component solution

The Role of Sulfite in the Wetting Etching of Silicon and Silica

Wet anisotropic etching characteristics of Si{111} in NaOH-based solution for silicon bulk micromachining

Effects of Chemical Etching on Surface Structure and Tribological Behavior of Silicate Substrates

Silver-Assisted Chemical Etching of Semiconductor Materials

Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Investigation on surface smoothing of silicon-on-insulator with gas phase hydrogen chloride etching

Experiment Study on Micro-Structure on Different Crystallographic Planes of Mc-Si Etched in Alkaline Solution

Wafer-scale synthesis of a morphologically controllable silicon ordered array as a platform and its SERS performance