Abstract:Ultra-thin silicon slicing technology plays a critical role in achieving high-efficiency and low-cost solar cells in the photovoltaic (PV) industry. However, the surface phase evolution of silicon wafers under an ultra-thin slicing process and resulting etching behavior remains unclear. In this study, the surface phase evolution of different surface thicknesses of silicon wafers was carefully studied. As the thickness of silicon wafers became relatively thin, the degree of surface stress-induced amorphous silicon (ST-α-Si) significantly increased. Moreover, the UPS test showed that the ST-α-Si layer had an orbital energy level relatively lower than that in monocrystalline silicon, thereby having lower reduction performance during metal-assisted chemical etching (MACE). A copper deposition experiment was conducted to study the etching hindering effect caused by silicon surface ST-α-Si phases. The result showed that the presence of ST-α-Si adversely affected copper deposition. To improve the MACE uniformity, a pretreatment involving the use of HF/H 2 O 2 mixed solution to remove the surface ST-α-Si layer was investigated. After HF/H 2 O 2 pretreatment, the uniformity of inverted pyramids formed through MACE on the silicon wafer surface was significantly improved. Moreover, the reflectance of the MACE-textured surface was reduced to 7.67% from 10.1% compared with that without pretreatment. Therefore, this study provides reference guidelines and useful approaches for preparing uniform inverted pyramid surfaces using MACE in ultra-thin silicon wafers.

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Comprehensive Study of Sf6/O-2 Plasma Etching for Mc-Silicon Solar Cells

Nano-Texturing of Single Crystalline Silicon Via Cu-Catalyzed Chemical Etching

Improvement of conversion efficiency of multicrystalline silicon solar cells by incorporating reactive ion etching texturing

Influence of Multi-crystalline Silicon Surfaces Passivation on Pit Topography of Textured Surface

Surface Texturing of Silicon Wafers by Two-step Ag-assisted Etching Process with New NSR Solution

New Surface Microstructure of Mono-Si Wafer Textured Using Wet Chemical Solutions for Solar Cell (revised Paper (2))

Acid Texturing of Large Area Multi-Crystalline Silicon Wafers for Solar Cell Fabrication

A Metal-Free Additive Texturization Method Used for Diamond-Wire-sawn Multi-Crystalline Silicon Wafers

Study on Micro-structure of Polycrystalline Silicon Surface Etched Using NaNO_3

Research on Silicon Wafer Surface Phase under the Ultra-thin Slicing Process and Its Etching Hindrance Behavior during Metal-Assisted Chemical Etching

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Pyramid size control and morphology treatment for high-efficiency silicon heterojunction solar cells

One-step Cu-assisted chemical etching at room temperature of inverted pyramid array for high-performance crystalline silicon solar cells

Formation Process of Pyramids on Single Crystal Si Surface