Abstract:The purpose of this study is to change the surface reflectivity of organic/inorganic hybrid silicon to increase light trapping by using CH3COONa as an etchant solution. The etching procedure is a simple and convenient way to increase light trapping to accomplish this goal. This paper reports on the surface topography of (100) P-type organic/inorganic hybrid silicon wafers modified by etching a controllable pyramid structure on the surface. Sodium acetate anhydrous (CH3COONa) solution was used to etch the silicon surface, with the concentration ratio of CH3COONa varying in the range of 22-38 wt.% ( +/- 0.12 wt%) and 3.5 +/- 0.1 wt of isopropyl alcohol (IPA) in a temperature range of 60-75 degrees C +/- 0.1 degrees C. By enhancing light trapping and absorption, texturization can effectively reduce the surface reflection and improve equipment performance. Texturization time ranges from 25 to 45 min during etching, while the SEM images per case are used to calculate the mean and standard deviation of the pyramid height. The etching solution is studied with respect to the reflectivity, wetting, and surface morphology of silicon wafers. The experimental results show that the optimal etching conditions are a sodium acetate anhydrous (CH3COONa) solution of 22 +/- 0.12 wt.% with IPA of 3.5 +/- 0.1 wt% for 45 min at a temperature of 75 degrees C. Therefore, from the results, it was noted that the size of the pyramids generated under this condition was 1.75 +/- 0.2 mu m. Correspondingly, from the results, surface reflectivity of 12 +/- 0.12% was observed under optimal conditions with wavelength in the the range of 450-900 nm. The results reveal that surface reflectivity modification is an effective way to control light trapping. The potential of this etching solution is well documented and paves the way for the manufacture of an efficient and low-photovoltaic device.

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