Piezoresistance Characteristics of Manganin Thin Films

杨邦朝,滕林,杜晓松,周鸿仁
DOI: https://doi.org/10.3969/j.issn.1001-2028.2004.09.002
2004-01-01
Abstract:For sensor of manganin microminiaturization, manganin thin films aimed at high-pressure measurement were prepared by DC magnetron sputtering. The structure and morphology of the films were analysed by XRD and SEM technique. The piezoresistance coefficient K is abtained through dynamic calibration. The experimental result shows that K depends on grain size of films. It is found that heat treatment at 360℃, 1 h is helpful for the growth of larger size grains, and improves K of the films (0.02 GPa–1). The value of K is equal to that of the foil-like.
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