Abstract:Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a> and 0.02 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>) in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times (5 to 25 min). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. We have studied the morphological and structural properties of PSi layers using the techniques of Xray Diffraction (XRD) and Scanning Electron Microscopy (SEM) and Gravimetric method. The Xray Diffraction data shows that the structure aspect of PSi layers remains crystalline as well as the decreasing of diffraction angle (thetaB) of Xray from PSi layers (29 to 26 degree) and increasing of the lattice parameter values of PSi structures with increasing of etching times from 5 to 25 min., and the resistivity of silicon substrates from 0.02 to 3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>. The nanocrystallite size is decreasing from (20.72 to 5.13 nm) with increasing of etching times, and the resistivity of silicon substrates. The SEM images shows that the values of pore width and PSi layer thickness increases from (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively with increasing of etching times and silicon substrates resistivities, while the values of the thickness of walls between pores has been varied from (1.25 to 0.03 micrometer) with increasing of etching times and silicon substrates resistivities. The pore shape of pores has been varied from Cylindrical to Rectangular and to Starful with varied of etching conditions. Further the measured specific surface area of PSi layers has been increased from (7.43 to 235.35 m2/cm3) with increasing of etching times and silicon substrates resistivities.

Effects of Micro-structure of Porous Silicon on Its Raman Spectra

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

The Influence of Microstructure on Optical Properties of Porous Silicon

Studies on microstructure and photoluminescence property of porous silicon

Microstructures and Emission Characteristics of Porous Silicon Films

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Preparation Of Porous Silicon By Electrochemical Etching Methods And Its Morphological And Optical Properties

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Al-assisted Anodic Etched Porous Silicon

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

Influence of Supercritical and Natural Drying Methods on Structure and Properties of Porous Silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Effects of Porous Silicon Morphology on Ballistic Electron Emission

Effect of post-treatment processes on the photoluminescence of porous silicon

Luminescence and photoconductivity properties of porous polycrystalline silicon

Microstructure and oxidation of porous silicon

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination

Study on porous silicon on Si substrates by Raman and photoluminescence spectra

Raman-Spectra In A Broad Frequency Region Of P(-) Type Porous Silicon

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching