Abstract:To improve the thermal stability and reliability of Sb2Te3‐based phase‐change random access memory, oxygen doping is synergized with PCH technology. This approach utilizes oxygen doping for enhanced thermal stability and crystallization control, and PCH application to refine grain size to the nanoscale. The electrical characteristics of devices are compared based on the effect of PCH. Phase‐change random access memory represents a notable advancement in nonvolatile memory technology; however, it faces challenges in terms of thermal stability and reliability, hindering its broader application. To mitigate these issues, doping and structural modification techniques such as phase‐change heterostructures (PCH) are widely studied. Although doping typically enhances thermal stability, it can adversely affect the switching speed. Structural modifications such as PCH have struggled to sustain stable performance under high atmospheric conditions. In this study, these challenges are addressed by synergizing oxygen‐doped Sb2Te3 (OST) with PCH technology. This study presents a novel approach in which OST significantly improves the crystallization temperature, power efficiency, and cyclability. Subsequently, the integration of the PCH technology bolsters the switching speed and further amplifies the device's reliability and endurance by refining the grain size (≈7 nm). The resultant OST‐PCH devices exhibit exceptional performance metrics, including a drift coefficient of 0.003 in the RESET state, endurance of ≈4 × 108 cycles, an switching speed of 300 ns, and 67.6 pJ of RESET energy. These findings suggest that the OST‐PCH devices show promise for integration into embedded systems, such as those found in automotive applications and Internet of Things devices.

Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Impact of titanium modification on the performance improvement and phase change mechanism of ZnSb thin film

B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

TiWOx Interfacial Layer for Current Reduction and Cyclability Enhancement of Phase Change Memory

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Excellent performance Ruthenium doped Sb2Te3 alloy for phase change memory

WN coating of TiN electrode to improve the reliability of phase change memory

Phase Change Heterostructure Memory with Oxygen‐Doped Sb2Te3 Layers for Improved Durability and Reliability through Nano crystalline Island Formation

Designing a Multilayered Oxygen Barrier Structure to Tackle Oxidation Challenges in Phase-Change Memory for Improved Reliability

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Bonding Nature and Optical Contrast of TiTe2/Sb2Te3 Phase-Change Heterostructure

High-performance Programmable Memory Devices Based on Co-Doped BaTiO3.

Buffer-Enhanced Electrical-Pulse-Induced Resistive Memory Effect in Thin Film Perovskites