Abstract:To improve the thermal stability and reliability of Sb2Te3‐based phase‐change random access memory, oxygen doping is synergized with PCH technology. This approach utilizes oxygen doping for enhanced thermal stability and crystallization control, and PCH application to refine grain size to the nanoscale. The electrical characteristics of devices are compared based on the effect of PCH. Phase‐change random access memory represents a notable advancement in nonvolatile memory technology; however, it faces challenges in terms of thermal stability and reliability, hindering its broader application. To mitigate these issues, doping and structural modification techniques such as phase‐change heterostructures (PCH) are widely studied. Although doping typically enhances thermal stability, it can adversely affect the switching speed. Structural modifications such as PCH have struggled to sustain stable performance under high atmospheric conditions. In this study, these challenges are addressed by synergizing oxygen‐doped Sb2Te3 (OST) with PCH technology. This study presents a novel approach in which OST significantly improves the crystallization temperature, power efficiency, and cyclability. Subsequently, the integration of the PCH technology bolsters the switching speed and further amplifies the device's reliability and endurance by refining the grain size (≈7 nm). The resultant OST‐PCH devices exhibit exceptional performance metrics, including a drift coefficient of 0.003 in the RESET state, endurance of ≈4 × 108 cycles, an switching speed of 300 ns, and 67.6 pJ of RESET energy. These findings suggest that the OST‐PCH devices show promise for integration into embedded systems, such as those found in automotive applications and Internet of Things devices.

Phase Change Heterostructure Memory with Oxygen‐Doped Sb2Te3 Layers for Improved Durability and Reliability through Nano crystalline Island Formation

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Bonding Nature and Optical Contrast of TiTe2/Sb2Te3 Phase-Change Heterostructure

Ultrahigh overall-performance phase-change memory by Yttrium dragging

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Designing a Multilayered Oxygen Barrier Structure to Tackle Oxidation Challenges in Phase-Change Memory for Improved Reliability

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

Recipe for ultrafast and persistent phase-change memory materials

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

High performance of Er-doped Sb2Te material used in phase change memory