Abstract:With the downscaling of CMOS devices, dynamic variability induced by negative bias temperature instability (NBTI) has become a critical issue. In addition to the time-dependent device-to-device variation (DDV) of NBTI degradation, the cycle-to-cycle variation (CCV) originated from random trap occupation is found non-negligible and should be added into the total dynamic variation. This paper summarizes our recent studies on NBTI-induced dynamic variability, focusing on the CCV effect, with more details on the statistical modeling, circuit reliability simulation methodologies and experimental results. By adding the random trap occupation into consideration, a statistical model for total dynamic variation (DDV+CCV) is proposed. The effective occupancy probability peff is introduced as a key parameter for modeling and circuit reliability simulation. With the statistical trap response (STR) method and modified on-the-fly method, the proposed model is validated by the experimental evidence under both DC and AC NBTI. According to the model and experimental results, circuit reliability simulation framework is proposed for both long-term quasi-static and short-term transient performance evaluation with the additional impact of CCV. Two representative digital circuit units, ring oscillator (RO) and SRAM cell, are simulated under different conditions, indicating it necessary to consider the evident influence of the CCV in accurate circuit reliability evaluation. The results are helpful for the reliability/variability-aware circuit design in nanoscale technology.

Prediction of NBTI Degradation in Dynamic Voltage Frequency Scaling Operations

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Fast Estimation of NBTI-Induced Delay Degradation Based on Signal Probability

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

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Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

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Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

Modeling of Threshold Voltage Degradation of 22nm FD-SOI Nmosfets under Dynamic Voltage Scaling