Plasma Treatment Introduced Memory Properties in Mos2 Field-Effect Transistors

Miaomiao Zhang,Yanhong Tong,Qingxin Tang,Yichun Liu
DOI: https://doi.org/10.7567/apex.9.014202
IF: 2.819
2016-01-01
Applied Physics Express
Abstract:We present a facile method to obtain MoS2-based nonvolatile memory field-effect transistors by oxygen plasma treatment on the MoS2 surface that is in contact with a dielectric. The oxygen plasma treatment provides a way of introducing deep defects into the MoS2 surface. Only those deep defects located at the semiconductor/dielectric interface can behave as charge trapping sites to develop the memory capability. No memory properties can be observed when the MoS2 surface far from the conductive channel was treated with oxygen plasma. This method brings promising advantages to MoS2-based memory devices obtained using a simple fabrication method and small device dimensions.
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