Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

Comment on "Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

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